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Thermal Degradation Behavior of Indium Tin Oxide Thin Films Deposited by Radio Frequency Magnetron Sputtering

Published online by Cambridge University Press:  01 June 2005

Yong-Nam Kim ,
Hyun-Gyoo Shin ,
Jun-Kwang Song ,
Dae-Hyoung Cho ,
Hee-Soo Lee  and
Yeon-Gil Jung
Yong-Nam Kim*
Affiliation:
Material Testing Team, Korea Testing Laboratory, Guro-gu, Seoul 152-848, Republic of Korea
Hyun-Gyoo Shin
Affiliation:
Material Testing Team, Korea Testing Laboratory, Guro-gu, Seoul 152-848, Republic of Korea
Jun-Kwang Song
Affiliation:
Material Testing Team, Korea Testing Laboratory, Guro-gu, Seoul 152-848, Republic of Korea
Dae-Hyoung Cho
Affiliation:
Material Testing Team, Korea Testing Laboratory, Guro-gu, Seoul 152-848, Republic of Korea
Hee-Soo Lee
Affiliation:
Material Testing Team, Korea Testing Laboratory, Guro-gu, Seoul 152-848, Republic of Korea
Yeon-Gil Jung
Affiliation:
Department of Materials Science and Engineering, Changwon National University, Changwon, Kyungnam 641-773, Republic of Korea
*
a) Address all correspondence to this author. e-mail: eternity@ktl.re.kr
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Abstract

The thermal degradation behavior of indium tin oxide (ITO) thin films coated on glass substrates using radio frequency (rf) magnetron sputtering was investigated over the temperature range of 100–400 °C in air. The resistivity of ITO films increases abruptly after the thermal degradation temperature of 250 °C is reached, with a slight increase from 200 to 250 °C. The x-ray photoelectron spectrometry intensity ratio of O/(In + Sn) in thermally degraded ITO films is higher than that in normal films. The carrier concentration gradually decreases up to 200 °C, sharply drops between 200 and 250 °C with increasing temperature, and then saturates from 275 °C. The Hall mobility drops suddenly at 275 °C. The diffusion of oxygen into oxygen interstitials and oxygen vacancies and the chemisorption of oxygen into grain boundaries decrease the carrier concentration and the Hall mobility, respectively. The former mainly affects the resistivity of ITO films below 250 °C, and the later above 250 °C.

Keywords

CeramicHall effectThin film
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 6 , June 2005 , pp. 1574 - 1579
Copyright
Copyright © Materials Research Society 2005

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