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Electrical properties of Pt/SrBi2Ta2O9/Bi4Ti3O12/p-Si heterostructure prepared by sol-gel processing

Published online by Cambridge University Press:  01 July 2006

Hua Wang*
Affiliation:
Department of Information Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China
Min-Fang Ren
Affiliation:
Department of Information Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China
*
a) Address all correspondence to this author. e-mail: wh65@gliet.edu.cn
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Abstract

Low-temperature processing as low as 550–700 °C of Pt/SrBi2Ta2O9 (SBT)/Bi4Ti3O12 (BIT)/p-Si heterostructure has been performed by a sol-gel method. The effects of annealing temperature on current density, C-V characteristics, and memory windows of Pt/SBT/BIT/p-Si heterostructure were investigated. The SBT/BIT multilayer films were polycrystalline with no pyrochlore phase and no preferred orientation. The leakage current density was under 3 × 10−7 A/cm2 at 5 V with asymmetry hysteresis loops for Pt/SBT/BIT/p-Si heterostructure. Although all C-V curves showed clockwise ferroelectric hysteresis loops and the memory window reached a maximum of 0.78 V at a sweep voltage of 5 V, the memory window changed asymmetrically with the variation of annealing temperature and sweep voltage. The maximum memory window of Pt/SBT/BIT/p-Si heterostructure prepared at lower temperatures was narrower at lower sweep voltage. The asymmetric behavior of the C-V characteristics was discussed in terms of electron injection from Si and the ferroelectric polarization effect.

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Articles
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1.Scott, J.F.: Ferroelectric memories today. Ferroelectrics 236, 247 (2000).CrossRefGoogle Scholar
2.Hirooka, G., Noda, M., Okuyama, M.: Proposal for a new ferroelectric gate field effect transistor memory based on ferroelectric-insulator interface conduction. Jpn. J. Appl. Phys. 43, 2190 (2004).CrossRefGoogle Scholar
3.Chen, S-Y., Sun, C-L., Chen, S-B., Chin, A.: Bi3.25La0.75Ti3O12 thin films on ultrathin Al2O3 buffered Si for ferroelectric memory application. Appl. Phys. Lett. 80, 3168 (2002).CrossRefGoogle Scholar
4.Hou, Y., Xu, X-H., Wang, H., Wang, M., Shang, S-X.: Bi3.25La0.75Ti3O12 thin films prepared on Si (100) by metalorganic decomposition method. Appl. Phys. Lett. 78, 1733 (2001).CrossRefGoogle Scholar
5.Chen, T-C., Li, T-K., Zhang, X-B., Desu, S.B.: The effect of excess bismuth on the ferroelectric properties of SrBi2Ta2O9 thin films. J. Mater. Res. 12, 1569 (1997).CrossRefGoogle Scholar
6.Ryu, S.O., Joshi, P.C., Desu, S.B.: Low temperature processed 0.7SrBi2Ta2O9–0.3Bi3TaTiO9 thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories. Appl. Phys. Lett. 75, 2126 (1999).CrossRefGoogle Scholar
7.Sbbarao, E.C.: Crystal chemistry of mixed bismuth oxides with layer-type structure. J. Am. Ceram. Soc. 45, 166 (1962).CrossRefGoogle Scholar
8.Wang, H., Yu, J., Zhou, W-L., Wang, Y-B., Zheng, Y-K., Zhao, J-H.: Characteristics of Pb(Zr0.52Ti0.48)O3 thin films on p-Si with a buffer layer of Bi4Ti3O12 prepared by pulsed laser deposition. Jpn. J. Appl. Phys. 40, 1388 (2001).CrossRefGoogle Scholar
9.Park, B.H., Kang, B.S., Bu, S.D., Noh, T.W., Lee, J., Jo, W.: Lanthanum-substituted bismuth titanate for use in non-volatile memories. Nature 401, 682 (1999).CrossRefGoogle Scholar
10.Aizawa, K., Ishiwara, H.: Correlation between ferroelectricity and grain structures of face-to-face annealed strontium bismuth tantalate thin films. Jpn. J. Appl. Phys. 39, L1191 (2000).CrossRefGoogle Scholar
11.Kohno, A., Sakamoto, H., Matuo, K.: Crystallization and structural phase transformation in sub-100-nm-thick SrBi2Ta2O9 thin film. Jpn. J. Appl. Phys. 44, 1928 (2005).CrossRefGoogle Scholar
12.Wang, H., Ren, M-F.: Synthesis and ferroelectric properties of SrBi2Ta2O9/Bi4Ti3O12/p-Si multilayer thin films by sol-gel. J. Mater. Sci.–Mater. Electron. 17, 165 (2006).CrossRefGoogle Scholar
13.Wang, H.: Growth and polarization feature studies on rapid thermally processed preferentially c-axis-oriented Bi4Ti3O12 thin films on Si by sol-gel. Mater. Sci. Eng. B 111, 64 (2004).CrossRefGoogle Scholar
14.Blom, P.W.M., Wolf, R.M., Cillessen, J.F.M., Krijn, M.P.C.M.: Ferroelectric Schottky diode. Phys. Rev. Lett. 73, 2107 (1994).CrossRefGoogle ScholarPubMed
15.Wang, H., Ren, M.F.: Effects of oriented growth on properties of Ag/Bi4Ti3O12/p-Si heterostructure prepared by a sol-gel method with rapid thermal annealing techniques. J. Mater. Sci.– Mater. Electron. 16(4), 209 (2005).CrossRefGoogle Scholar