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Self-assembly of Silicon Nanotubes

Published online by Cambridge University Press:  01 February 2011

Ming Xie ,
Jiesheng Wang ,
Chee Huei Lee  and
Yoke Khin Yap
Ming Xie
Affiliation:
mxie@mtu.edu, Michigan Technological University, Department of Physics, 118 Fisher Hall, 1400 Townsend Drive, Houghton, MI, 49931, United States
Jiesheng Wang
Affiliation:
jiewang@mtu.edu, Michigan Technological University, Department of Physics, 118 Fisher Hall, 1400 Townsend Drive, Houghton, MI, 49931, United States
Chee Huei Lee
Affiliation:
chlee@mtu.edu, Michigan Technological University, Department of Physics, 118 Fisher Hall, 1400 Townsend Drive, Houghton, MI, 49931, United States
Yoke Khin Yap
Affiliation:
ykyap@mtu.edu, Michigan Technological University, Department of Physics, 118 Fisher Hall, 1400 Townsend Drive, Houghton, MI, 49931, United States
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Abstract

The growth of silicon nanotubes (SiNTs) by a dual-RF-plasma treatment technique is reported here. These SiNTs are vertically aligned and self-assembled from Si substrates at 500 degree Celsius by the use of Cu catalysts. Their diameters are ∼50 to 80 nm with tubular wall thickness of ∼10-15nm. Cu vapors were found partially filled inside the SiNTs. This is a novel technique that can convert bulk materials into their nanostructures.

Keywords

physical vapor deposition (PVD)nanostructureSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1057: Symposium II – Nanotubes and Related Nanostructures , 2007 , 1057-II13-03
Copyright
Copyright © Materials Research Society 2008

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