Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-24T09:16:53.160Z Has data issue: false hasContentIssue false

Tailoring of Structural Morphology of Silver Nanowires in Electrochemical Growth

Published online by Cambridge University Press:  01 February 2011

Amrita Singh
Affiliation:
amrita@physics.iisc.ernet.in, Indian Institute of science, Physics, C.V. Raman Avenue, Bangalore, 560012, India, +91 80 2293 2726, =91 80 2360 2602
Arindam Ghosh
Affiliation:
arindam@physics.iisc.ernet.in, Indian Institute of Science, Physics, C.V. Raman Avenue, Bangalore, 560012, India
Amrita Singh
Affiliation:
amrita@physics.iisc.ernet.in, Indian Institute of Science, Physics, Bangalore, 560012, India
Amrita Singh
Affiliation:
amrita@physics.iisc.ernet.in, Indian Institute of Science, Physics, Bangalore, 560012, India
Get access

Abstract

Noble metal such as Ag normally exists in an fcc crystal structure. However as the size of the material is decreased to nanometer lengthscales, a structural transformation from that of its bulk state can be expected with new atomic arrangements due to competition between internal packing and minimization of surface energy. In many previous studies, it has been shown that silver nanowires (AGNWs) grown inside anodic alumina (AAO) templates by ac or dc electrochemical deposition from silver salts or complexes, adopt fcc structure and below some critical diameter ∼ 20 nm they may acquire hcp structure at low temperature. This is, however, critically dependant on the nature of confinement, as AgNWs grown inside nanotube confinement with subnanometer diameter have been reported to have fcc structure. Hence the question of the crystal structure of metal nanowires under combined influence of confinement, temperature and deposition condition remains open. In this abstract we show that the alternative crystal structures of AGNWs at room temperature can be achieved with electrochemical growth processes under specific conditions determined by the deposition parameters and nature of confinement. We fabricated AgNWs of 4H hexagonal structure with diameters 30 – 80 nm inside polycarbonate (PC) templates with a modified dc electrodeposition technique, where the nanowires were grown at deposition potentials as low as 10 mV in 2 M silver nitrate solution[1]. We call this low-potential electrodeposition (LPED) since the electrodeposition process occurs at potential much less than the standard Nernst potential (770 mV) of silver. Two types of electrodes were used – stainless steel and sputtered thin Pt film, neither of which had any influence on the crystal structure of the nanowires. EDS elemental analysis showed the nanowires to consist only of silver. Although the precise atomic dynamics during the LPED process is unclear at present, we investigated this with HRTEM (high-resolution transmission electron microscopy) characterization of nanowires grown over various deposition times, as well as electrical conductivity measurements. These experiments indicate that nanowire growth does not occur through a three-dimensional diffusion controlled process, as proposed for conventional over-potential deposition, but follow a novel instantaneous linear growth mechanism. Further experiments showed that, (a) conventional electrochemical growth at a small over-potential in a 2 mM AgNO3 solution yields nanowires with expected fcc structure inside the same PC templates, and (2) no nanowire was observed under the LPED conditions inside hard AAO templates, indicating that LPED-growth process, and hcp structure of the corresponding nanowires depend on deposition parameters, as well as nature of confinement.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ditlbacher, Harald, Hohenau, Andreas, Wagner, Dieter, Kreibig, Uwe, PRL 95, 257403 [2005].Google Scholar
2. Yanson, A I, Bollinger, G R, van den Brom, H E, Agrait, N and van Ruitenbeek, J M, Nature 395, 783, [1998].Google Scholar
3. Yi, G and Schwarzacher, W, Appl. Phys. Lett. 74, 1746, [1999].Google Scholar
4. Martin, C. R., Science 266, 1961, [1993].Google Scholar
5. Gülseren, O., Ercolessi, F. and Tosatti, E., Phys. Rev. Lett. 80, 3775, [1998]Google Scholar
6. Jona, F, Marcus, P. M., J. Phys.: Condens. Matter, 16, 5199, [2004]Google Scholar
7. Liu, , Luo, J., Zhu, J., Nano Lett., 6, 408, [2006]Google Scholar
8. Hong, B. H., Bae, S. C., Lee, C. W., Jeong, S., Kim, K. S., Science, 294, 348, [2001]Google Scholar
9. Sudha, , Sangaranarayanan, M. V., J. Phys. Chem.B, 106, 2699, [2002]Google Scholar
10. Sauer, G., Brehm, G., Schneider, S., Nielsch, K., Wehrspohn, R. B., Choi, J., Hofmeister, H., sele, GöU., J. Appl. Phys., 91, 3243, [2002]Google Scholar
11. Benfield, R. E., Grandjean, D., Dore, J. C., Wu, Z., Kroll, M., Sawitowski, T., Schmid, G., Eur. Phys. J. D, 16, 399, [2001].Google Scholar
12. Palomar-Pardave, M., Gonzalez, I., Batina, N., J. Phys. Chem. B, 104, 3545, [2000].Google Scholar
13. Tian, V, Wang, J., Kurtz, J., Mallouk, T. E., Chan, M. H. W., Nano Lett., 3, 919, [2003]Google Scholar