a1 Semiconductor Research Corporation, Research Triangle Park, North Carolina 27709
This paper provides an overview of directed self-assembly (DSA) options that exhibit potential for enabling extensible high-volume patterning of nanoelectronics devices. It describes the current set of research requirements, which a DSA technology must satisfy to warrant insertion consideration, and summarizes the state-of-the art. The primary focus is on chemical patterning and graphoepitaxial approaches to directing block copolymer (BCP) based assembly. These options exhibit the nearest-term potential, among the emerging DSA technologies, for satisfying projected International Technology Roadmap for Semiconductors (ITRS) patterning requirements. The paper concludes with a selected set of additional challenges, which represent potential barriers to the integration of directed BCP patterning into a nanoelectronics manufacturing line, as well as a few emerging application opportunities for related functional materials. A glossary of acronyms and terms may be found at the end of this manuscript.
(Received June 17 2010)
(Accepted September 14 2010)
(Online publication January 28 2011)