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Electrical and Optical Properties of Amorphous and Microcrystalline Hydrogenated Silicon Films Deposited Using Saddle Field Glow Discharge

Published online by Cambridge University Press:  01 February 2011

I. Milostnaya ,
T. Allen ,
F. Gaspari ,
N.P. Kherani ,
D. Yeghikyan ,
W.L. Roes ,
T. Kosteski  and
S. Zukotynski
I. Milostnaya
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON M5S 1A4CANADA
T. Allen
Affiliation:
Department of Physics, Geology and Astronomy, University of Tennessee at Chattanooga, Chattanooga, TN 37403U.S.A.
F. Gaspari
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON M5S 1A4CANADA
N.P. Kherani
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON M5S 1A4CANADA
D. Yeghikyan
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON M5S 1A4CANADA
W.L. Roes
Affiliation:
Department of Physics, Geology and Astronomy, University of Tennessee at Chattanooga, Chattanooga, TN 37403U.S.A.
T. Kosteski
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON M5S 1A4CANADA
S. Zukotynski
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON M5S 1A4CANADA
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Abstract

Amorphous (a-Si:H) and microcrystalline (μc-Si:H) hydrogenated silicon films were obtained using DC saddle field glow discharge. The structure of the films was determined by Raman spectroscopy, SEM and TEM. The optoelectronic characteristics of both a-Si:H and μcSi:H were investigated using FTIR, UV/VIS spectroscopy, dark electrical conductivity (σd) and photoconductivity (σph) measurements. Boron and phosphorous doping of a-Si:H and μc-Si:H films was also investigated. The results show that both a-Si:H and μc-Si:H undoped films are highly resistive (σd=10-8-10-10 Ω-1cm-1). The doping efficiency of μc-Si:H films is much higher than a-Si:H films. The Tauc gap for a-Si:H was in the range 1.8-1.9 eV and for μc-Si:H films it was in the range 1.9-2.5 eV. The photoconductivity measurements of undoped films indicate a higher photosensitivity of a-Si:H films (σph/σd=104)than that of μc-Si:H films (σph/σd=10-100).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A6.15
Copyright
Copyright © Materials Research Society 2003

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