Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-25T07:39:26.414Z Has data issue: false hasContentIssue false
  • English
  • Français

Micrometer Scale Silicon Dioxide Tunnels for On-chip Fluidic Sample Delivery to Nanometer-scale Chemical Sensors

Published online by Cambridge University Press:  01 February 2011

Ali Gokirmak  and
Sandip Tiwari
Ali Gokirmak
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca NY 14853, U.S.A.
Sandip Tiwari
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca NY 14853, U.S.A.
Get access

Abstract

We have developed a low temperature, CMOS compatible back-end-of-the-line process of making micrometer scale silicon dioxide tunnels for fluidic sample delivery to nanometer scale CMOS based chemical sensors. The fabrication process for these tunnels involve deposition of silicon dioxide over sacrificial photoresist and removal of the sacrificial resist from small holes opened on the top surface. The fabrication process allows arbitrary tunnel widths, about one micrometer and larger, if the supporting pillars are used. The highest process temperature is 135 C. The fabricated structures are compatible with cleaning steps in strong base or acid solutions and can withstand anneal steps at higher temperatures. It is possible to implement complicated, multilevel chemical sensor and mixer networks where microfluidic tunnels cross over each other by repeating the fabrication sequence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J9.1
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Taur, Y., Ning, T. H., “Fundamentals of Modern VLSI Devices” Cambridge University Press (1998)Google Scholar
2 Olthuis, W., Sensors and Actuators B, 105 (2005) 96–103 Google Scholar
3 Mahfoz-Kotb, H., Salaun, A.C., Mohammed-Brahim, T., Bonnaud, O., Elect. Dev. Lett. 24 (3) 165–167 (2003)Google Scholar
4 Doyle, B. S., Datta, S., Doczy, M., Hareland, S., Jin, B., Kavalieros, J., Linton, T., Murthy, A., Rios, R., and Chau, R., Elect. Dev. Lett. 24, (4) 263–265 (2003)Google Scholar
5 Gokirmak, A., Tiwari, S., Electronics Letters, 41 (3) 157–158 (2005)Google Scholar
6 Rasmussen, A., Gaitan, M., Locascio, L.E., Zaghloul, M.E, J. of Microelectromechanical Systems 10 (2) 286–297 (2001)Google Scholar