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Anomalous Temperature dependence of Fermi-edge Singularity in Modulation-doped AlGaAs/InGaAs/GaAs hetero-structures

Published online by Cambridge University Press:  01 February 2011

K. Gopalakrishna Naik ,
K.S.R.K. Rao ,
T. Srinivasan ,
R. Muralidharan  and
S. K. Mehta
K. Gopalakrishna Naik
Affiliation:
Department of physics, Indian Institute of Science, Bangalore 560 012, India.
K.S.R.K. Rao
Affiliation:
Email address of corresponding author: ksrkrao@physics.iisc.ernet.in
T. Srinivasan
Affiliation:
Solid State Physics Laboratory, Lucknow Road, Delhi-110 054, India.
R. Muralidharan
Affiliation:
Solid State Physics Laboratory, Lucknow Road, Delhi-110 054, India.
S. K. Mehta
Affiliation:
Solid State Physics Laboratory, Lucknow Road, Delhi-110 054, India.
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Abstract

The temperature and power dependence of Fermi-edge singularity (FES) in high-density two-dimensional electron gas, specific to pseudomorphic AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures is studied by photoluminescence (PL). In all these structures, there are two prominent transitions E11 and E21 considered to be the result of electron-hole recombination from first and second electron sub-bands with that of first heavy-hole sub-band. FES is observed approximately 5 -10 meV below the E21 transition. At 4.2 K, FES appears as a lower energy shoulder to the E21 transition. The PL intensity of all the three transitions E11, FES and E21 grows linearly with excitation power. However, we observe anomalous behavior of FES with temperature. While PL intensity of E11 and E21 decrease with increasing temperature, FES transition becomes stronger initially and then quenches-off slowly (till 40K). Though it appears as a distinct peak at about 20 K, its maximum is around 7 - 13 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J18.18
Copyright
Copyright © Materials Research Society 2005

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