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Towards the Routine Fabrication of P in Si Nanostructures: Understanding P Precursor Molecules on Si(001)

Published online by Cambridge University Press:  01 February 2011

Steven R. Schofield ,
Neil J. Curson ,
Oliver Warschkow ,
Nigel A. Marks ,
Hugh F. Wilson ,
Michelle Y. Simmons ,
Phillip V. Smith ,
Marian W. Radny  and
David R. McKenzie
Steven R. Schofield
Affiliation:
School of Mathematical and Physical Sciences, University of Newcastle, Callaghan 2308, Australia Centre for Quantum Computer Technology, School of Physics, University of New South Wales, Sydney 2052, Australia
Neil J. Curson
Affiliation:
Centre for Quantum Computer Technology, School of Physics, University of New South Wales, Sydney 2052, Australia
Oliver Warschkow
Affiliation:
School of Physics, University of Sydney, Sydney 2006, Australia
Nigel A. Marks
Affiliation:
School of Physics, University of Sydney, Sydney 2006, Australia
Hugh F. Wilson
Affiliation:
School of Physics, University of Sydney, Sydney 2006, Australia
Michelle Y. Simmons
Affiliation:
Centre for Quantum Computer Technology, School of Physics, University of New South Wales, Sydney 2052, Australia
Phillip V. Smith
Affiliation:
School of Mathematical and Physical Sciences, University of Newcastle, Callaghan 2308, Australia
Marian W. Radny
Affiliation:
School of Mathematical and Physical Sciences, University of Newcastle, Callaghan 2308, Australia
David R. McKenzie
Affiliation:
School of Physics, University of Sydney, Sydney 2006, Australia
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Abstract

The ability to controllably position individual phosphorus dopant atoms in silicon sur-faces is a critical first step in creating nanoscale electronic devices in silicon, for example a phosphorus in silicon quantum computer. While individual P atom placement in Si(001) has been achieved, the ability to routinely position P atoms in Si for large-scale device fabrication requires a more detailed understanding of the physical and chemical processes leading to P atom incorporation. Here we present an atomic-resolution scanning tunneling microscopy study of the interaction of the P precursor molecule phosphine (PH3) with the Si(001) surface. In particular, we present the direct observation of PH3 dissociation and diffusion on Si(001) at room temperature and show that this dissociation is occasionally complete, leaving a P monomer bound to the surface. Such surface bound P monomers are important because they are the most likely entry point for P atoms to incorporate into the substrate surface at elevated temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E5.4
Copyright
Copyright © Materials Research Society 2005

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