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Density of States in Tritiated Amorphous Silicon Measured Using CPM

Published online by Cambridge University Press:  01 February 2011

Simone Pisana ,
Stefan Costea ,
Tome Kosteski ,
Nazir P. Kherani ,
Stefan Zukotynski  and
Walter T. Shmayda
Simone Pisana*
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto Toronto, ON M5S 3G4, Canada
Stefan Costea
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto Toronto, ON M5S 3G4, Canada
Tome Kosteski
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto Toronto, ON M5S 3G4, Canada
Nazir P. Kherani
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto Toronto, ON M5S 3G4, Canada
Stefan Zukotynski
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto Toronto, ON M5S 3G4, Canada
Walter T. Shmayda
Affiliation:
†† Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14623–1299, USA
*
† Department of Engineering, University of Cambridge, Trumpington Street, Cambridge, CB2 1PZ, UK
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Abstract

The constant photocurrent method has been used to obtain the density of occupied electronic states of tritiated amorphous silicon thin films. The analyses showed a peak of defects located 1.24 eV below the conduction band edge, suggesting that the main type of defect present in the films was a doubly occupied dangling bond. The concentration of defect states increases as a result of tritium decay by about two orders of magnitude over a period of 500 hours. The defect density in the tritiated amorphous silicon samples could be reduced by thermal annealing, after which it increased once more.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L8.9
Copyright
Copyright © Materials Research Society 2005

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References

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