Hostname: page-component-7c8c6479df-p566r Total loading time: 0 Render date: 2024-03-28T15:03:14.562Z Has data issue: false hasContentIssue false

Growth and study of BaZrO3 thin films by pulsed excimer laser ablation

Published online by Cambridge University Press:  01 February 2011

V. Rajasekarakumar
Affiliation:
Materials Research Center, Indian Institute of Science, Bangalore- 560 012, India.
P. Victor
Affiliation:
Materials Research Center, Indian Institute of Science, Bangalore- 560 012, India.
R. Ranjith
Affiliation:
Materials Research Center, Indian Institute of Science, Bangalore- 560 012, India.
S. Saha
Affiliation:
Argonne National Laboratory, Argonne, IL, USA.
S. Rajagopalan
Affiliation:
Materials Science Division, IGCAR, Kalpakkam, India.
A. K. Tyagi
Affiliation:
Materials Science Division, IGCAR, Kalpakkam, India.
S. B. Krupanidhi
Affiliation:
Materials Research Center, Indian Institute of Science, Bangalore- 560 012, India.
Get access

Abstract

Thin films of BaZrO3 (BZ) were grown using a pulsed laser deposition technique on platinum coated silicon substrates. Films showed a polycrystalline perovskite structure upon different annealing procedures of in-situ and ex-situ crystallization. The composition analyses were done using Energy dispersive X-ray analysis (EDAX) and Secondary ion mass spectrometry (SIMS). The SIMS analysis revealed that the ZrO2 formation at the right interface of substrate and the film leads the degradation of the device on the electrical properties in the case of ex-situ crystallized films. But the in-situ films exhibited no interfacial formation. The dielectric properties have been studied for the different temperatures in the frequency regime of 40 Hz to 100kHz. The response of the film to external ac stimuli was studied at different temperatures, and it showed that ac conductivity values in the limiting case are correspond to oxygen vacancy motion. The electrical modulus is fitted to a stretched exponential function and the results clearly indicate the presence of the non-Debye type of dielectric relaxation in these materials.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Cava, R. J., Peck, W. F. Jr, Krajewski, J. J., Roberts, G. L., Barber, B. P., O'Bryan, H. M. and Gammel, P. L., Appl. Phys. Lett. 70, 1396 (1997).Google Scholar
2 Oates, D. E. and Anderson, A. C.: IEEE Trans. Magn. 28, 867 (1991).Google Scholar
3 Liang, G. C., Withers, R. S., Cole, B. F. and Newman, N.: IEEE Trans. Microwave Theory & Tech. 42, 34 (1994).Google Scholar
4 Young, K. H., Negrete, G. V., Hammond, R. B., Inam, A., Ramesh, R., Hart, D. L. and Yonezawa, Y., Appl. Phys. Lett. 58, 1789 (1991).Google Scholar
5 Fukuda, Koichi and Kitoh, Ryozo, Awai, Ikuo, J. Am. Ceram. Soc., 77 [1], 149 (1994).Google Scholar
6 Kim, Taeseok, Jeongmin, OH, Park, Byungwoo and Hong, Kug Sun, Jpn. J. Appl. Phys. 39, 4153 (2000).Google Scholar
7 Wakino, Kikuo, Nishikawa, Toshio, Ishikawa, Youhei and Tamura, Hiroshi, Br. Ceram. Trans. J., 89, 39 (1990).Google Scholar
8 Deerickx, D. etal., J. Mater. Sci. Lett., 15, 1573 (1996).Google Scholar
9 Dobal, P. S., Dixit, A., and Katiyar, R. S., Yu, Z., Guo, R., and Bhalla, A. S., J. Appl. Phys. 89, 8085 (2001).Google Scholar
10 Mansingh, A., Dhar, A., J. Phys. D: Appl. Phys. 18 (1985) 2059.Google Scholar
11 Williams, G. and Watts, D. C., Trans. Faraday Soc. 66, 80 (1970).Google Scholar
12 Moynihan, C. T., Bosech, L. P., and Laberge, N. L., Phys. Chem. Glasses 14, 122 (1973).Google Scholar