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New Nonvolatile Memory Effect Showing Reproducible Large Resistance Ratio Employing Nano-gap Gold Junction

Published online by Cambridge University Press:  01 February 2011

Yasuhisa Naitoh ,
Masayo Horikawa  and
Tetsuo Shimizu
Yasuhisa Naitoh
Affiliation:
ys-naitou@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Nanotechnology Research Institute, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8562, Japan, +81-29-861-7892, +81-29-861-2786
Masayo Horikawa
Affiliation:
masayo-horikawa@aist.go.jp, Advanced Industrial Science and Technology, Nanotechnology Research Institute, 1-1-1 Higashi, Tsukuba, Ibaraki,, 305-8562, Japan
Tetsuo Shimizu
Affiliation:
tetsuo-shimizu@aist.go.jp, Advanced Industrial Science and Technology, Nanotechnology Research Institute, 1-1-1 Higashi, Tsukuba, Ibaraki,, 305-8562, Japan
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Abstract

A large negative resistance is observed in the I-V characteristics of gold nanogap junction when high-bias voltages are applied. This phenomenon is characteristic behaviour on the nanometre scale; it only occurs for gap widths slightly under 13 nm. Furthermore, this junction exhibits a non-volatile resistance hysteresis when the bias voltage is reduced very rapidly from a high level to around 0 V, and when the bias voltage is reduced slowly. This non-volatile resistance change occurs as a result of changes in the gap width between the metal electrodes, brought about by the applied bias voltage.

Keywords

memoryAunanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I04-08
Copyright
Copyright © Materials Research Society 2007

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