MRS Proceedings

Articles

New Nonvolatile Memory Effect Showing Reproducible Large Resistance Ratio Employing Nano-gap Gold Junction

2007 MRS Spring Meeting.

Yasuhisa Naitoha1, Masayo Horikawaa2 and Tetsuo Shimizua3

a1 ys-naitou@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Nanotechnology Research Institute, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8562, Japan, +81-29-861-7892, +81-29-861-2786

a2 masayo-horikawa@aist.go.jp, Advanced Industrial Science and Technology, Nanotechnology Research Institute, 1-1-1 Higashi, Tsukuba, Ibaraki,, 305-8562, Japan

a3 tetsuo-shimizu@aist.go.jp, Advanced Industrial Science and Technology, Nanotechnology Research Institute, 1-1-1 Higashi, Tsukuba, Ibaraki,, 305-8562, Japan

Abstract

A large negative resistance is observed in the I-V characteristics of gold nanogap junction when high-bias voltages are applied. This phenomenon is characteristic behaviour on the nanometre scale; it only occurs for gap widths slightly under 13 nm. Furthermore, this junction exhibits a non-volatile resistance hysteresis when the bias voltage is reduced very rapidly from a high level to around 0 V, and when the bias voltage is reduced slowly. This non-volatile resistance change occurs as a result of changes in the gap width between the metal electrodes, brought about by the applied bias voltage.

(Received July 16 2007)

(Accepted July 18 2007)

Key Words

  • memory;
  • Au;
  • nanostructure
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