MRS Proceedings

Articles

Low Temperature High Quality Growth of Silicon-Dioxide Using Oxygenation of Hydrogenation-Assisted Nano-Structured Silicon Thin Films

2007 MRS Spring Meeting.

Nima Rouhia1, Behzad Esfandyarpoura2, Shams Mohajerzadeha3, Pouya Hashemia4, Bahman Hekmat-Shoara5 and Michael D. Robertsona6

a1 nimarouhi793@yahoo.com, University of Tehran, Electrical and Computer Eng., North Kargar Ave, Tehran Iran, Tehran, 14395, Iran

a2 smohajer@tfl.ir, University of Tehran, Tehran, 14395, Iran

a3 smohajer@tfl.ir, University of Tehran, Tehran, 14395, Iran

a4 smohajer@tfl.ir, University of Tehran, Tehran, 14395, Iran

a5 hekmat@ Princeton.EDU, University of Tehran, Tehran, 14395, Iran

a6 michael.robertson@acadiau.ca, Acadia University, Wolfville, 14395, Canada

Abstract

We report a low temperature high quality oxide growth of nano-structured silicon thin films on silicon substrates obtained through a hydrogenation-assisted PECVD technique followed by a plasma enhanced oxidation process. The deposited layers were investigated and compared with respect to their electrical, optical and stoichiometrical properties by means of Ellipsometry, Rutherford backscattering (RBS), Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, and by current voltage and capacitance voltage measurements on metal-oxide-semiconductor (MOS) structures.

(Received May 19 2007)

(Accepted May 21 2007)

Key Words

  • Si;
  • oxidation;
  • hydrogenation
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