Editors : L. Chen, M. Hersam
a1 firstname.lastname@example.org, University of South Alabama, Electrical Engineering, 307 university Blvd, ECEB51, Mobile, AL 36688, Mobile, AL, 36688, United States, 2514606923
a2 email@example.com, University of south Alabama, ECE, 307 university Blvd., Mobile, AL, 36688, United States
a3 firstname.lastname@example.org, University of South Alabama, Mechanical Engineering, 307 University Blvd., Mobile, AL, 36688, United States
In this research work, a model has been proposed in view of the recent experimental demonstration using Calcium (Ca) as a contact metal to realize the n-type carbon nanotube field effect transistors (CNTFET). In order to fully optimize this proposed device model, effects of different parameters like the work function, oxide thickness, the oxide capacitance and the source velocity limits were studied. Among all the parameters, the work function of the contact metal plays an important role for controlling the flow of carriers through the carbon nanotube channel and to reduce the threshold voltage. A semi-classical simulation of the proposed n-type CNTFET has been performed. Results show an excellent subthreshold swing value of 62.91 mV/decade, close to the International Technology Roadmap for Semiconductor (ITRS) specifications.
(Received April 30 2007)
(Accepted June 08 2007)