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Interface structure of AlN/TiN/MgO(001) prepared by molecular beam epitaxy

Published online by Cambridge University Press:  31 January 2011

X. L. Ma ,
Y. Sugawara ,
N. Shibata  and
Y. Ikuhara
X. L. Ma*
Affiliation:
Japan Fine Ceramics Center, 2–4–1 Mutsuno, Atsuta-ku, 456 Nagoya, Japan
Y. Sugawara
Affiliation:
Japan Fine Ceramics Center, 2–4–1 Mutsuno, Atsuta-ku, 456 Nagoya, Japan
N. Shibata
Affiliation:
Japan Fine Ceramics Center, 2–4–1 Mutsuno, Atsuta-ku, 456 Nagoya, Japan
Y. Ikuhara
Affiliation:
Department of Materials Science, University of Tokyo, 113 Tokyo, Japan
*
a)Address all correspondence to this author. Present address: Department of Materials Science, School of Engineering, University of Tokyo, 113 Tokyo, Japan. e-mail: ma@ceramic.mm.t.u-tokyo.ac.jp
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Abstract

Thin AlN films were grown by molecular beam epitaxy on MgO(001) substrate with a thin TiN buffer layer. The as-prepared AlN/TiN/MgO(001) interfaces have been characterized by cross-sectional high-resolution electron microscopy (HREM). It is found that the thin TiN buffer layer is epitaxially grown on the MgO(001) substrate and hexagonal AlN epitaxially on the as-received TiN(001). Based on the growth orientation relationship and HREM images, atomistic structure models for the AlN/TiN interface are proposed, image simulated, and compared with experimental images.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 12 , December 1999 , pp. 4685 - 4689
Copyright
Copyright © Materials Research Society 1999

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