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Effect of doping level during rapid thermal processing of multilayer structures

Published online by Cambridge University Press:  31 January 2011

A. R. Abramson ,
P. Nieva ,
H. Tada ,
P. Zavracky ,
I. N. Miaoulis  and
P. Y. Wong
A. R. Abramson
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Tufts University, Medford, Massachusetts 02155
P. Nieva
Affiliation:
Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02155
H. Tada
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Tufts University, Medford, Massachusetts 02155
P. Zavracky
Affiliation:
Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02155
I. N. Miaoulis
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Tufts University, Medford, Massachusetts 02155
P. Y. Wong*
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Tufts University, Medford, Massachusetts 02155
*
a)Address all correspondence to this author. e-mail: pwong@tufts.edu
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Abstract

A numerical model has been developed to examine the temperature history of a multilayer wafer undergoing rapid thermal processing (RTP) for various doping densities. Partial transparency and thin film interference effects are considered. Doping levels from ∼1015 to ∼1018 cm−3 are examined. Numerical temperature predictions of the lightly doped wafer are compared with experimental measurements. Heating rates for the lightly doped wafer fluctuate due to partial transparency effects and reach a maximum of ∼50 °C/s. The heavily doped wafer sees a maximum heating rate of ∼100 °C/s. Because the wafers are opaque above 700 °C regardless of their level of doping, all wafers reach steady state at ∼845 °C.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 6 , June 1999 , pp. 2402 - 2410
Copyright
Copyright © Materials Research Society 1999

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