Journal of Materials Research


Ultraviolet laser-induced formation of thin silicon oxide film from the precursor β-chloroethyl silsesquioxane

Jaya Sharmaa1, Donald H. Berrya1, Russell J. Compostoa1 and Hai-Lung Daia1

a1 Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6202


Formation of silicon oxide thin films from spin-coated β-chloroethyl silsesquioxane (β-cesq) on silicon, NaCl, and quartz was induced by 193 nm laser pulses. The silicon oxide deposition is characterized by ir, uv, ellipsometry, and Rutherford backscattering spectrometry. The silicon oxide films obtained by uv irradiation were found to have much less carbon and chlorine as impurities and have a higher refractive index as compared to those obtained by annealing. The photoinduced oxide films were found to be smooth, without laser-induced microrough or periodic structures.

(Received March 13 1998)

(Accepted July 21 1998)