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Controlled growth of gallium nitride single-crystal nanowires using a chemical vapor deposition method

Published online by Cambridge University Press:  31 January 2011

Song Han
Affiliation:
Department of Electrical Engineering—Electrophysics, University of Southern California, Los Angeles, California 90089–0271
Wu Jin
Affiliation:
Department of Electrical Engineering—Electrophysics, University of Southern California, Los Angeles, California 90089–0271
Tao Tang
Affiliation:
Department of Electrical Engineering—Electrophysics, University of Southern California, Los Angeles, California 90089–0271
Chao Li
Affiliation:
Department of Electrical Engineering—Electrophysics, University of Southern California, Los Angeles, California 90089–0271
Daihua Zhang
Affiliation:
Department of Electrical Engineering—Electrophysics, University of Southern California, Los Angeles, California 90089–0271
Xiaolei Liu
Affiliation:
Department of Electrical Engineering—Electrophysics, University of Southern California, Los Angeles, California 90089–0271
Jie Han
Affiliation:
Eloret Corporation, NASA Ames Research Center, Mountain View, California 94035
Chongwu Zhou
Affiliation:
Department of Electrical Engineering—Electrophysics, University of Southern California, Los Angeles, California 90089–0271
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Abstract

Chemical vapor deposition (CVD) using gold nanoparticles as the catalyst to grow high-quality single-crystal gallium nitride nanowires was developed. This method enables control over several important aspects of the growth, including control of the nanowire diameter by using monodispersed gold clusters, control of the nanowire location via e-beam patterning of the catalyst sites, and control of the nanowire orientation via epitaxial growth ona-plane sapphire substrates. Our work opens up new ways to use GaN nanowires as nanobuilding blocks.

Type
Rapid-Communications
Copyright
Copyright © Materials Research Society 2003

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