Journal of Materials Research

Rapid-Communications

Controlled growth of gallium nitride single-crystal nanowires using a chemical vapor deposition method

Song Hana1, Wu Jina1, Tao Tanga1, Chao Lia1, Daihua Zhanga1, Xiaolei Liua1, Jie Hana2 and Chongwu Zhoua3a)

a1 Department of Electrical Engineering—Electrophysics, University of Southern California, Los Angeles, California 90089–0271

a2 Eloret Corporation, NASA Ames Research Center, Mountain View, California 94035

a3 Department of Electrical Engineering—Electrophysics, University of Southern California, Los Angeles, California 90089–0271

Abstract

Chemical vapor deposition (CVD) using gold nanoparticles as the catalyst to grow high-quality single-crystal gallium nitride nanowires was developed. This method enables control over several important aspects of the growth, including control of the nanowire diameter by using monodispersed gold clusters, control of the nanowire location via e-beam patterning of the catalyst sites, and control of the nanowire orientation via epitaxial growth ona-plane sapphire substrates. Our work opens up new ways to use GaN nanowires as nanobuilding blocks.

(Received September 10 2002)

(Accepted October 28 2002)

Footnotes

a) Address all correspondence to this author. e-mail: [email protected]

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