Journal of Materials Research


Enhancement of the 1.31-μm emission properties of Dy3+-doped Ge–Ga–S glasses with the addition of alkali halides

Yong Beom Shina1, Jong Heoa2 and Hyoun Soo Kima3

a1 Bio-Information Sensing Team/Human Information Technology Department, Telecommunication Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 161 Kajong-Dong, Yusong-Gu, Taejun, 305-350, South Korea

a2 Photonic Glasses Laboratory, Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Korea

a3 Applied Optics R&D Group, Samsung Electronics Co. Ltd., Suwon, 440–600, Korea


Alkali halides such as KBr, KI, CsBr, and CsI were added to Dy3+-doped Ge–Ga–S glasses, and their effects on the 1.31-μm emission property were investigated. The intensities of the 1.31-μm emission (6F11/2 · 6H9/26H15/2) increased at the expense of the 1.75-μm emission intensity (6H11/26H15/2) with the alkali halide addition. The lifetimes of the 1.31-μm emission level also increased as much as 35 times from 38 μs for Ge–Ga–S glass to 1320 μs for the glass containing 10 mol% CsBr. These enhancements occurred only when the ratio of MX (M = K, Cs; X = Br, I)/Ga was equal to or larger than unity. Raman spectra of Ge–Ga–S–CsBr glasses indicated the formation of [GaS3/2Br] complexes, which provide the preferred sites for Dy3+. Due to this new local environment of Dy3+, the multiphonon relaxation rates from the Dy3+:6F11/2 · 6H9/2 level decreased by approximately four orders of magnitude. The enhancement in the 1.31-μm emission properties with alkali halide addition supports the potentials of these glasses as hosts for the Dy3+-doped fiber-optic amplifiers.

(Received March 17 2000)

(Accepted February 15 2001)