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Bulk- or interface-limited electrical conductions in IrO2/(Ba,Sr)TiO3/IrO2 thin film capacitors

Published online by Cambridge University Press:  31 January 2011

Cheol Seong Hwang
Cheol Seong Hwang
Affiliation:
School of Material Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, San #56–1 Shillim-dong, Kwanak-ku, Seoul, 151–742, Korea
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Abstract

The electrical conduction behavior of sputter-grown (Ba,Sr)TiO3 thin films having IrO2 electrodes were studied under the assumption of a fully accumulated film having a negative space charge density of 1 × 1019 cm−3 at 25 °C. The negative space charge decreased the actual field strength in the film and resulted in a decreasing leakage current with increasing film thickness at a given applied field. The current conduction in a very low field, roughly less than 150 KV/cm, showed a linear current density–voltage (J–V) behavior at 25 °C. From that field to about 420 KV/cm, the bulk-limited Poole–Frenkel mechanism controlled the overall conduction property at room temperature. Under high field strength, from 420 KV/cm to 1 MV/cm, the interface-limited thermionic field emission mechanism was dominant. The dielectric constant obtained from Poole–Frenkel fitting was approximately 300 ± 50 at 25 °C, which was in qualitative agreement with the value obtained from low-frequency capacitance measurements. The detailed mechanisms of the linear and nonlinear field-dependent emission conductions were discussed with reference to the direction of band bending, not to the carrier concentration.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 12 , December 2001 , pp. 3476 - 3484
Copyright
Copyright © Materials Research Society 2001

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