Journal of Materials Research

Articles

The reaction between a TiNi shape memory thin film and silicon

Susanne Stemmera1 p1, Gerd Duschera2, Christina Scheua2, Arthur H. Heuera3 and Manfred Rühlea4

a1 Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106

a2 Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, 70174 Stuttgart, Germany

a3 Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106

a4 Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, 70174 Stuttgart, Germany

Abstract

The reaction between shape-memory TiNi thin films and silicon has been characterized by conventional, analytical, and high-resolution transmission electron microscopy. A reaction layer is formed during the 525 °C post-deposition crystallization anneal of the sputter-deposited TiNi, and consists of several phases: Ti2Ni, a nickel silicide, and a ternary titanium nickel silicide. The mechanism for the interlayer formation is discussed.

(Received July 01 1996)

(Accepted December 23 1996)

Correspondence:

p1 Present address: Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, B-3001 Leuven, Belgium, susanne@sunmtm.kuleuven.ac.be.

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