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Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti62.5Si37.5 thin films during Xe ion irradiation

Published online by Cambridge University Press:  14 January 2011

Sandip Bysakh*
Affiliation:
Transmission Electron Microscopy Laboratory, Analytical Facility Division, Central Glass and Ceramic Research Institute, Calcutta 700 032, India
Kazutaka Mitsuishi
Affiliation:
High Voltage Electron Microscopy Station, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305 0003, Japan
Minghui Song
Affiliation:
High Voltage Electron Microscopy Station, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305 0003, Japan
Kazuo Furuya
Affiliation:
High Voltage Electron Microscopy Station, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305 0003, Japan
Kamanio Chattopadhyay
Affiliation:
Department of Materials Engineering, Indian Institute of Science, Bangalore 560 012, India
*
a)Address all correspondence to this author. e-mail: sbysakh@cgcri.res.in
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Abstract

As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe+ ion beam to an ion fluence of about 1016 ions-cm−2. Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti5Si3 intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

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Articles
Copyright
Copyright © Materials Research Society 2011

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