MRS Proceedings

Articles

Epitaxial growth of Si nanowires by a modified VLS method using molten Ga as growth assistant

2008 MRS Fall Meeting.

Annika Gewalta1, Bodo Kalkofena2, Marco Liskera3 and Edmund P. Burtea4

a1 annika.gewalt@ovgu.de, Otto-von-Guericke University, Institute of Micro and Sensor Systems, Magdeburg, Germany

a2 bodo.kalkofen@ovgu.de, Otto-von-Guericke University, Institute of Micro and Sensor Systems, Magdeburg, Saxony-Anhalt, Germany

a3 marco.lisker@ovgu.de, Otto-von-Guericke University, Institute of Micro and Sensor Systems, Magdeburg, Saxony-Anhalt, Germany

a4 edmund.burte@ovgu.de, Otto-von-Guericke University, Institute of Micro and Sensor Systems, Magdeburg, Saxony-Anhalt, Germany

ABSTRACT

In this paper the deposition and morphological characterization of gallium island structures on silicon and first results of silicon wire growth assisted by the created gallium droplets is presented. The islands and wires were grown on (111)-oriented single crystalline p-doped silicon substrates by microwave plasma enhanced chemical vapor deposition (MW PECVD) using trimethylgallium (TMGa) and silane (SiH4) as precursors for island and wire growth, respectively. The samples were investigated by SEM, EDS, XPS, and AFM.

(Received November 24 2008)

(Accepted February 02 2009)

Key Words

  • Ga;
  • nanoscale;
  • plasma-enhanced CVD (PECVD) (deposition)
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