MRS Proceedings
- MRS Proceedings / Volume 1230 / 2009
- Copyright © Materials Research Society 2010
- DOI: http://dx.doi.org/10.1557/PROC-1230-MM06-05 (About DOI)
Table of Contents - Volume 1230 - Symposium MM – Ultrafast Processes in Materials Science
Editors : A.M. Lindenberg, D. Reis, P. Fuoss, T. Tschentscher, B.S. Siwick
Articles
Monte Carlo Modelisation of Photoexcited Carriers Relaxation Including Auger Effect in Narrow Band Gap InGaAs
2009 MRS Fall Meeting.
Eric Teaa1 and Frederic Aniela2
a1 eric.tea@u-psud.frerc_t@yahoo.fr, Institut d'Electronique Fondamentale, UMR 8622 CNRS, Orsay, France
a2 frederic.aniel@u-psud.fr, Institut d'Electronique Fondamentale, UMR 8622 CNRS, Orsay, France
Abstract
The Auger effect is one of the fastest recombination mechanisms in narrow band gap semiconductors at high carrier concentration. This regime is of great interest for high efficiency hot carrier solar cells application and is also involed in many optical devices. Therefore, the knowledge of this limitting process is required for the determination of carrier lifetime useful to accurate solar cell efficiency calculations. For the first time, we present a carrier lifetime study versus carrier concentration in InGaAs based on a Monte Carlo model where the Auger effect is included as a relaxation mecanism.
(Received November 19 2009)
(Accepted January 04 2010)
Key Words
- electronic material;
- III-V;
- photovoltaic
