Editors : A.M. Lindenberg, D. Reis, P. Fuoss, T. Tschentscher, B.S. Siwick
a1 email@example.com_t@yahoo.fr, Institut d'Electronique Fondamentale, UMR 8622 CNRS, Orsay, France
a2 firstname.lastname@example.org, Institut d'Electronique Fondamentale, UMR 8622 CNRS, Orsay, France
The Auger effect is one of the fastest recombination mechanisms in narrow band gap semiconductors at high carrier concentration. This regime is of great interest for high efficiency hot carrier solar cells application and is also involed in many optical devices. Therefore, the knowledge of this limitting process is required for the determination of carrier lifetime useful to accurate solar cell efficiency calculations. For the first time, we present a carrier lifetime study versus carrier concentration in InGaAs based on a Monte Carlo model where the Auger effect is included as a relaxation mecanism.
(Received November 19 2009)
(Accepted January 04 2010)