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Optimizing sulfurisation conditions in the fabrication of Cu2ZnSnS4 absorber layers from electroplated precursors

Published online by Cambridge University Press:  31 January 2011

Jonathan James Scragg ,
Daniel Wolverson ,
Guillaume Zoppi  and
Laurence M Peter
Jonathan James Scragg
Affiliation:
J.J.Scragg@bath.ac.uk, University of Bath, Chemsitry, Bath, United Kingdom
Daniel Wolverson
Affiliation:
pysdw@bath.ac.uk, University of Bath, Physics, Bath, United Kingdom
Guillaume Zoppi
Affiliation:
guillaume.zoppi@northumbria.ac.uk, Northumbria University, Northumbria Photovoltaics Applications Centre, Newcastle upon Tyne, United Kingdom
Laurence M Peter
Affiliation:
l.m.peter@bath.ac.uk, University of Bath, Chemsitry, Bath, United Kingdom
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Abstract

Using direct photoelectrochemical measurement of the photocurrent obtained from Cu2ZnSnS4 (CZTS) absorber layers made by a two-stage electroplating-sulfurisation process, the influence of processing conditions (temperature, time, and pressure) on material quality was investigated with a view to understanding the long sulfurisation times usually found in the literature. The improvement in photocurrent due to KCN etching was also studied, and seems to be due both to removal of surface phases and also slower etching of the bulk material. The optimum sulfurisation time was found to be around 50 minutes, despite evidence that sulfur incorporation and phase formation are complete within 5 minutes. Slow grain growth was suggested as a rate-limiting factor, and a rate constant was derived based on a simple model.

Keywords

photovoltaicthin filmelectrodeposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1210: Symposium Q – Photovoltaic Materials and Manufacturing Issues II , 2009 , 1210-Q06-03
Copyright
Copyright © Materials Research Society 2010

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References

[1] Katagiri, H. Jimbo, K. Yamada, S. Kamimura, T. Maw, W. S. Fukano, T. Ito, T. and Motohiro, T. Applied Physics Express 1(2008).Google Scholar
[2] Fernandes, P. A. P. Salome, M. P. and Cunha, A. F. da, Thin Solid Films 517, 2519(2009).Google Scholar
[3] Tanaka, T. Nagatomo, T. Kawasaki, D. Nishio, M. Guo, Q. Wakahara, A. Yoshida, A. and Ogawa, H. Journal of Physics and Chemistry of Solids 66, 1978(2005).Google Scholar
[4] J. Zhang and Shao, L. X. Science in China Series E-Technological Sciences 52, 269(2009).Google Scholar
[5] Scragg, J. J. Dale, P. J. and Peter, L. M. Thin Solid Films 517, 2481(2009).Google Scholar
[6] Scragg, J. J. Dale, P. J. Peter, L. M. Zoppi, G. and Forbes, I. Physica Status Solidi B-Basic Solid State Physics 245, 1772(2008).Google Scholar
[7] Scragg, J. J. Berg, D. and Dale, P. J. Journal of Electroanalytical Chemistry (accepted)(2010).Google Scholar
[8] Fernandes, P. A. Salome, P. M. P. and Cunha, A. F. da, Semiconductor Science and Technology 24(2009).Google Scholar
[9] Weber, A. Krauth, H. Perlt, S. Schubert, B. Kötschau, I., Schorr, S. and Schock, H. W. Thin Solid Films 517, 2524(2009).Google Scholar
[10] Weber, A. Mainz, R. Unold, T. Schorr, S. and Schock, H.-W., physica status solidi (c) 6, 1245(2009).Google Scholar
[11] Chaturvedi, M. C. Banerjee, S. and Jena, A. K. Scripta Materialia 36, 269(1997).Google Scholar