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ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Method

Published online by Cambridge University Press:  31 January 2011

Yumi Kawamura ,
Nozomu Hattori ,
Naomasa Miyatake ,
Kazutoshi Murata  and
Yukiharu Uraoka
Yumi Kawamura
Affiliation:
k-yumi@ms.naist.jp, Nara Institute of Science and Technology, Graduate School of Materials Science, Ikoma, Japan
Nozomu Hattori
Affiliation:
hattori@mj.mes.co.jp, Mitsui Engineering & shipbuilding Co. Ltd., Tamano, Japan
Naomasa Miyatake
Affiliation:
miyatake@mj.mes.co.jp, Mitsui Engineering & shipbuilding Co. Ltd., Tamano, Japan
Kazutoshi Murata
Affiliation:
murata@mj.mes.co.jp, Mitsui Engineering & shipbuilding Co. Ltd., Tamano, Okayama, Japan
Yukiharu Uraoka
Affiliation:
uraoka@ms.naist.jp, Nara Institute of Science and Technology, Graduate School of Materials Science, Ikoma, Nara, Japan
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Abstract

In this study, we deposited zinc oxide (ZnO) thin film by atomic layer deposition (ALD) as an active channel layer in thin film transistor (TFT) using two different oxidizers, water (H2O-ALD) and oxygen radical (PA-ALD). The fabricated TFTs were annealed at various temperatures, in an oxygen ambient gas. The electrical properties of TFTs with PA-ALD ZnO film annealed at the temperature up to 400[oC] improved without any degradation of the subthreshold swing or any large shift of the threshold voltage. Through this study, we found that the high performance ZnO TFTs is possibly obtained using PA-ALD at low temperature, and the electrical properties are dependent on the annealing temperature.

Keywords

atomic layer depositiondeviceselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H10-27
Copyright
Copyright © Materials Research Society 2010

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