MRS Proceedings

Articles

Modification of structure and optical property of ZnO nanowires by Ga ion beam

2009 MRS Fall Meeting.

Yao Chenga1, Yao Lianga2, Ming Leia3, Siu Kong Harka4 and Ning Wanga5

a1 ifpossiblecheng@gmail.com, the Hong Kong University of Science and Technology, Physics Department, the William Mong Institution of Nano Science and Technology, Hong Kong, Hong Kong

a2 yliang0625@hotmail.com, the Chinese University of Hong Kong, Physics Department, Hong Kong, Hong Kong

a3 leimingiphy@yahoo.com.cn, the Hong Kong University of Science and Technology, Physics Department, the William Mong Institution of Nano Science and Technology, Hong Kong, Hong Kong

a4 skhark@sun1.phy.cuhk.edu.hk, the Chinese University of Hong Kong, Physics Department, Hong Kong, Hong Kong

a5 phwang@ust.hk, the Hong Kong University of Science and Technology, Physics Department, the William Mong Institution of Nano Science and Technology, Hong Kong, Hong Kong

Abstract

Based on the focused ion beam (FIB) technology, we have prepared ZnO nanowires containing periodic nano-sized structures by an ultra thin Ga ion beam. ZnO nanowires can keep a good crystal quality after Ga ion bombardment. The cathodoluminescence (CL) spectroscopy study of the Ga-doped ZnO nanowires at low temperatures shows that the Ga doping effect can largely suppress the green emission that may mainly originate from the defects on the surfaces of ZnO nanowires.

(Received November 18 2009)

(Accepted December 30 2009)

Key Words

  • nanostructure;
  • II-VI;
  • optical properties
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