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Red-Green-Blue MOSLED Made by PECVD Grown SiOx with Detuning RF Plasma Power

Published online by Cambridge University Press:  31 January 2011

Chih-Hsien Cheng ,
Bo-Han Lai  and
Gong-Ru Lin
Chih-Hsien Cheng
Affiliation:
shouham@hotmail.com, National Taiwan University, Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, Taipei, Taiwan, Province of China
Bo-Han Lai
Affiliation:
f97941009@ntu.edu.tw, National Taiwan University, Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, Taipei, Taiwan, Province of China
Gong-Ru Lin
Affiliation:
grlin@ntu.edu.tw, National Taiwan University, No. 1 Roosevelt Road Sec. 4, Taipei, 10617, Taiwan, Province of China
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Abstract

Si quantum dot (Si-QD) based multi-color metal oxide semiconductor lighting emission diodes (MOSLEDs) made on Si-rich SiOx grown by detuning RF plasma power in a plasma enhanced chemical vapor deposition (PECVD) system are demonstrated. With the RF plasma powers increasing from 50 to 70 W at 10 W increment, the turn-on voltage and maximum electroluminescence (EL) power red-, green- and blue-color MOSLEDs increase from 70, 90 and 99 V and 7, 26 and 55 nW, respectively. The power-current slope of 0.51, 3.24 and 53.82 mW/A are obtained for these MOSLEDs with corresponding power conversion ratio (PCR) of 5.13×10-6, 2.52×10-5 and 2.47×10-4. Both the turn-on voltage and power slope linearly increase with enhancing thickness of the Si-QD based MOSLED.

Keywords

plasma-enhanced CVD (PECVD) (chemical reaction)luminescencenanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1208: Symposium O – Excitons and Plasmon Resonances in Nanostructures II , 2009 , 1208-O07-06
Copyright
Copyright © Materials Research Society 2010

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