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Electronic structure and transport properties of ternary skutterudite: CoX3/2Y3/2

Published online by Cambridge University Press:  31 January 2011

Dmitri Volja
Affiliation:
dvolja@MIT.EDU, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, Massachusetts, United States
Marco Fornari
Affiliation:
fornari@phy.cmich.edu, Central Michigan University, Department of Physics, Mount Pleasant, Michigan, United States
Boris Kozinsky
Affiliation:
Boris.Kozinsky@us.bosch.com, Robert Bosch LLC, Research and Technology Center, Cambridge, Massachusetts, United States
Nicola Marzari
Affiliation:
marzari@mit.edu, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, Massachusetts, United States
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Abstract

Electronic properties of ternary skutterudites AX3/2Y3/2 (A=Co, X=Ge, Sn and Y=S, Te) are investigated using first principles calculations to clarify recent experimental results. Band derivatives are computed accurately within an approach based on Maximally Localized Wannier Functions (MLWFs). Band structures exhibit larger effective masses compared to parental binary CoSb3. Our results also indicate a more parabolic dispersion near the top of the valence band and a multivalley character in both conduction and valence band. Despite the improved thermopower these skutterudites has relatively low power factor due to increased resistivity. The fundamental cause of such large resistivity seems to be associated with the ionicity of the bonding.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

1 Nolas, G. S., Yang, J., and Ertenberg, R. W., Phys. Rev. B 68, 193206 (2003)Google Scholar
2 Laufek, F., Návrátil, J. and Goliáš, V. G, Powder diffraction 23, 15 (2008)Google Scholar
3 Vaquiero, P., Sobany, G. G. and Stindl, M., J. of Solid State Chemistry 181, 768 (2008)Google Scholar
4 Vaqueiro, P., Sobany, G. G., Powell, A.V., and Knight, K. S., J. of Solid State Chemistry 179, 2047 (2006)Google Scholar
5 Vaquiero, P. and Sobany, G. G., Mater. Res. Soc. Symp. Proc. Vol. 1044 (2008)Google Scholar
6 Kohn, W. and Sham, L. J., Physical Review 140, A1133 -A1138 (1965).Google Scholar
7 Hohenberg, P. and Kohn, W., Physical Review 136, B864–B871 (1964).Google Scholar
8 Ceperley, D. M. and Alder, B. J., Phys. Rev. Lett. 45, 566 (1980)Google Scholar
9 Perdew, J. P. and Zunger, A., Phys. Rev. B 23, 5048 (1981).Google Scholar
10 Baroni, S., Corso, A. Dal, Gironcoli, S. de, Gianozzi, P., Cavazzoni, C., Ballabio, G., Scandolo, S., Chiarotti, G., Focher, P., Pasquarello, A., Laasonen, K., Trave, A., Car, R., Marzari, N., and Kokalj, A., ari, http://www.pwscf.org/Google Scholar
11 Marzari, N. and Vanderbilt, D., Phys. Rev. B 56, 12847 (1997)Google Scholar
12 Yates, J. R., Wang, X., Vanderbilt, D. and Souza, I., Phys. Rev. B 75, 195121 (2007)Google Scholar
13 Souza, I., Marzari, N., and Vanderbilt, D., Phys. Rev. B 65, 035109 (2001)Google Scholar
14 Mostofi, A. A., Yates, J. R., Lee, Y.-S., Souza, I., Vanderbilt, D., and Marzari, N., Comput. Phys. Commun. 178, 685 (2008), http://www.wannier.orgGoogle Scholar
15 Fleurial, J.-P., Caillat, T., Borshchevsky, A., Proceedings of the 16th International Conference on, Thermoelectrics, Dresden, Germany, 1997, p. 1.Google Scholar
16 Fleural, J.-P., Caillat, T. and Borschevsky, A., Proc. 14 14th th Int. Energy Conf. on Thermoelectrics St. Petersburg, Russia, (1995), p.231 Google Scholar
17 Singh, D.J. and Mazin, I.I., PRB 56, R1650 (1997)Google Scholar