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Measurements of Liquid Silicon Resistivity on Silicon Microwires

Published online by Cambridge University Press:  31 January 2011

Gokhan Bakan ,
Kadir Cil ,
Adam Cywar ,
Helena Silva  and
Ali Gokirmak
Gokhan Bakan
Affiliation:
gokhan@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Kadir Cil
Affiliation:
kadir.cil@uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Adam Cywar
Affiliation:
adam.cywar@gmail.com, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Helena Silva
Affiliation:
silva@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
Ali Gokirmak
Affiliation:
gokirmak@engr.uconn.edu, University of Connecticut, Electrical & Computer Engineering, Storrs, Connecticut, United States
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Abstract

Nanocrystalline silicon microwires are self-heated through microsecond voltage pulses. Nonlinear changes in current level are observed during the voltage pulse, which end with melting of the microwires. Liquid silicon resistivity is extracted as 65.9 ± 6.1 μΩ.cm from the minimum resistance of the wire during the voltage pulse. The extracted resistivity is in good agreement with previously reported values.

Keywords

liquidSiannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1178: Symposium AA – Semiconductor Nanowires–Growth, Size-Dependant Properties and Applications , 2009 , 1178-AA06-06
Copyright
Copyright © Materials Research Society 2009

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References

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