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FTIR study of copper agglomeration during atomic layer deposition of copper

Published online by Cambridge University Press:  31 January 2011

Min Dai ,
Jinhee Kwon ,
Yves J. Chabal ,
Mathew D. Halls  and
Roy G. Gordon
Min Dai
Affiliation:
mindai@physics.rutgers.edu, Rutgers University, Chemistry and Chemical Biology Department, Piscataway, New Jersey, United States
Jinhee Kwon
Affiliation:
jinhee@utdallas.edu, University of Texas at Dallas, Department of Materials Science and Engineering, Richardson, Texas, United States
Yves J. Chabal
Affiliation:
chabal@utdallas.edu, University of Texas at Dallas, Department of Materials Science and Engineering, Richardson, Texas, United States
Mathew D. Halls
Affiliation:
MHalls@accelrys.com, Accelrys Inc., Materials Science Division, San Diego, California, United States
Roy G. Gordon
Affiliation:
gordon@chemistry.harvard.edu, Harvard University, Department of Chemistry and Chemical Biology, Cambridge, Massachusetts, United States
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Abstract

The growth of of metallic copper by atomic layer deposition (ALD) using copper(I) di-sec-butylacetamidinate ([Cu(sBu-amd)]2) and molecular hydrogen (H2) on SiO2/Si surfaces has been studied. The mechanisms for the initial surface reaction and chemical bonding evolutions with each ALD cycle are inferred from in situ Fourier transform infrared spectroscopy (FTIR) data. Spectroscopic evidence for Cu agglomeration on SiO2 is presented involving the intensity variations of the SiO2 LO/TO phonon modes after chemical reaction with the Cu precursor and after the H2 precursor cycle. These intensity variations are observed over the first 20 ALD cycles at 185°C.

Keywords

atomic layer depositionCuinfrared (IR) spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1155: Symposium C – CMOS Gate-Stack Scaling–Materials, Interfaces and Reliability Implications , 2009 , 1155-C11-06
Copyright
Copyright © Materials Research Society 2009

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