MRS Proceedings

Articles

FTIR study of copper agglomeration during atomic layer deposition of copper

2009 MRS Spring Meeting.

Min Daia1, Jinhee Kwona2, Yves J. Chabala3, Mathew D. Hallsa4 and Roy G. Gordona5

a1 mindai@physics.rutgers.edu, Rutgers University, Chemistry and Chemical Biology Department, Piscataway, New Jersey, United States

a2 jinhee@utdallas.edu, University of Texas at Dallas, Department of Materials Science and Engineering, Richardson, Texas, United States

a3 chabal@utdallas.edu, University of Texas at Dallas, Department of Materials Science and Engineering, Richardson, Texas, United States

a4 MHalls@accelrys.com, Accelrys Inc., Materials Science Division, San Diego, California, United States

a5 gordon@chemistry.harvard.edu, Harvard University, Department of Chemistry and Chemical Biology, Cambridge, Massachusetts, United States

Abstract

The growth of of metallic copper by atomic layer deposition (ALD) using copper(I) di-sec-butylacetamidinate ([Cu(sBu-amd)]2) and molecular hydrogen (H2) on SiO2/Si surfaces has been studied. The mechanisms for the initial surface reaction and chemical bonding evolutions with each ALD cycle are inferred from in situ Fourier transform infrared spectroscopy (FTIR) data. Spectroscopic evidence for Cu agglomeration on SiO2 is presented involving the intensity variations of the SiO2 LO/TO phonon modes after chemical reaction with the Cu precursor and after the H2 precursor cycle. These intensity variations are observed over the first 20 ALD cycles at 185°C.

(Received May 25 2009)

(Accepted August 17 2009)

Key Words

  • atomic layer deposition;
  • Cu;
  • infrared (IR) spectroscopy
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