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Phase Change Memory with Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties

Published online by Cambridge University Press:  01 February 2011

Ilya V. Karpov
Affiliation:
ilya.v.karpov@intel.com, Intel, Santa Clara, California, United States
David Kencke
Affiliation:
david.l.kencke@intel.com, Intel, Portland, Oregon, United States
Derchang Kau
Affiliation:
derchang.kau@intel.com, Intel, Santa Clara, California, United States
Stephen Tang
Affiliation:
Stephen.TANG@numonyx.com, Numonyx B.V., San Jose, California, United States
Gianpalo Spadini
Affiliation:
gianpaolo.spadini@intel.com, Intel, santa clara, California, United States
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Abstract

We present a novel scalable and stackable nonvolatile solid state memory. Each cell consists of a storage element, based on phase change memory (PCM) element, and an integrated selector, using an Ovonic threshold switch (OTS). The cell is implemented to enable a true cross-point array. The main device characteristics and behaviors, corresponding physical processes in different operation modes, and key material properties are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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