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On The Mechanism of Nucleation in Pulsed-laser Quenched Si Films on SiO2

Published online by Cambridge University Press:  01 February 2011

Yikang Deng ,
Qiongying Hu ,
Ui-Jin Chung ,
Adrian Chitu ,
Alexander Limanov  and
James Im
Yikang Deng
Affiliation:
yd2121@columbia.edu, Columbia University, Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, New York, New York, United States
Qiongying Hu
Affiliation:
qh2101@columbia.edu
Ui-Jin Chung
Affiliation:
uc2111@columbia.edu, Columbia University, Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, New York, New York, United States
Adrian Chitu
Affiliation:
ac2224@columbia.edu, Columbia University, Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, New York, New York, United States
Alexander Limanov
Affiliation:
abl24@columbia.edu, Columbia University, Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, New York, New York, United States
James Im
Affiliation:
ji12@columbia.edu, Columbia University, Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, New York, New York, United States
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Abstract

We have investigated the solid nucleation mechanism in laser-quenched Si films on SiO2. Previously neglected experimental steps, consisting of BHF-etching and irradiation in vacuum, were implemented to reduce potential extrinsic influences. The resulting experimental findings and computational analysis lead us to conclude that solid nucleation consistently takes place heterogeneously at, and only at, the bottom liquid Si-SiO2 interface.

Keywords

Sithin filmnucleation & growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A12-03
Copyright
Copyright © Materials Research Society 2010

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