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Refinement of thermodynamic data on GaN

Published online by Cambridge University Press:  31 January 2011

K.T. Jacob ,
Shwetank Singh  and
Y. Waseda
K.T. Jacob*
Affiliation:
Department of Materials Engineering, Indian Institute of Science, Bangalore 560 012, India; and Centre for Advanced Nitride Technology, Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Aoba-ku, Sendai 980-8577, Japan
Shwetank Singh
Affiliation:
Department of Materials Engineering, Indian Institute of Science, Bangalore 560 012, India
Y. Waseda
Affiliation:
Centre for Advanced Nitride Technology, Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Aoba-ku, Sendai 980-8577, Japan
*
a)Address all correspondence to this author. e-mail: katob@materials.iisc.ernet.in
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Abstract

Although GaN is one of the important electronic materials of this decade, thermodynamic data for this compound are not known with sufficient reliability. The limited information available is not internally consistent. Measured in this study are high-temperature heat capacities using a differential scanning calorimeter and Gibbs energies of formation employing a solid-state electrochemical technique. The solid-state cell was based on single-crystal CaF2 as the electrolyte and Ca3N2 as the auxiliary electrode to convert the nitrogen chemical potential established by the equilibrium between Ga and GaN into an equivalent fluorine potential. The heat capacity of GaN at ambient pressure can be represented by the equation: CoP / J mol−1 K−1 = 74.424 − 0.00106T + (46720/T2) − (685.9/T0.5), in the temperature range from 350 to 1075 K. The standard Gibbs energy of formation of GaN in the range from 875 to 1125 K can be expressed as: ΔfGo/ J mol−1 (±465) = −128,749 + 115.029 T. This corresponds to a decomposition temperature of 1119 ± 4 K for GaN in pure nitrogen at standard pressure. On the basis of these new measurements and a critical assessment of information that is available in the literature, a refined set of data for GaN in the temperature range from 298.15 to 1400 K is presented.

Keywords

Electronic materialNitrideSpecific heat
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 12 , December 2007 , pp. 3475 - 3483
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1Barin, I.Thermochemical Data of Pure Substances, 2nd ed.VCH Weinheim, Germany 1993 597Google Scholar
2Wagman, D.D., Evans, W.H., Parker, V.B., Halow, I., Bailey, S.M.Schumm, R.H.: Selected Values of Chemical Thermodynamic Properties, NBS Technological Note 270-3 National Bureau of Standards Washington, DC 1968 220Google Scholar
3Knacke, O., Kubaschewski, O.Hesselmann, K.: Thermochemical Properties of Inorganic Substances, 2nd ed.Springer Verlag Berlin 1991 750Google Scholar
4Pankratz, L.B., Stuve, J.M.Gokcen, N.A.: Thermodynamic Data for Mineral Technology, Bulletin 677 United States Department of the Interior, Bureau of Mines Washington, DC 1984Google Scholar
5Hahn, H.Juza, R.: Examinations on the nitrides of cadmium, gallium, indium and germanium: Metal amides and metal nitrides; VIII announcement. Z. Anorg. Allg. Chem. 244, 111 1940CrossRefGoogle Scholar
6Ranade, M.R., Tessier, F., Navrotsky, A., Leppert, V.J., Risbud, S.H., DiSalvo, F.J.Balkas, C.M.: Enthalpy of formation of gallium nitride. J. Phys. Chem. B 104, 4060 2000CrossRefGoogle Scholar
7Zieborak-Tomaszkiewicz, I.: Some thermodynamic aspects of nitrides in material science: Fluorine bomb calorimetric study. J. Therm. Anal. Calorim. 83, 611 2006CrossRefGoogle Scholar
8Karpinski, J., Jun, J.Porowski, S.: Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN. J. Cryst. Growth 66, 1 1984Google Scholar
9Karpinski, J.Porowski, S.: High pressure thermodynamics of gallium nitride. J. Cryst. Growth 66, 11 1984Google Scholar
10Madar, R., Jacob, G., Hallais, J.Fruchart, R.: High pressure solution growth of gallium nitride. J. Cryst. Growth 31, 197 1975Google Scholar
11Thurmond, C.D.Logan, R.A.: Equilibrium pressure of molecular nitrogen over gallium nitride. J. Electrochem. Soc. 119, 622 1972Google Scholar
12Jacob, K.T., Rao, D.B.Nelson, H.G.: Some studies on a solid state sulfur probe for coal gasification system. J. Electrochem. Soc. 125, 758 1978Google Scholar
13Akila, R.Jacob, K.T.: The mobility of oxygen ions in CaF2. J. Appl. Electrochem. 20, 294 1990CrossRefGoogle Scholar
14Jacob, K.T.: Determination of the Gibbs energy of diamond using a solid state cell. Solid State Commun. 94, 763 1995Google Scholar
15Jacob, K.T.Seetharaman, S.: Thermodynamic stability of metallurgical coke relative to graphite. Metall. Mater. Trans. B 25B, 149 1994CrossRefGoogle Scholar
16Demidenko, A.F., Koshchenko, V.I., Sabanova, L.D.Gran, Yu.M.: Low temperature heat capacity, entropy and enthalpy of aluminum and gallium nitrides. Russ. J. Phys. Chem. (Engl. Transl.) 49, 940 1975Google Scholar
17Koshchenko, V.I., Demidenko, A.F., Sabanova, L.D., Yachmenev, V.E., Gran, Yu.M.Radchenko, A.F.: Temperature-dependence of the thermodynamic properties of gallium nitride at 5-300 degrees K. Inorg. Mater. 15, 1329 1979Google Scholar
18Kremer, R.K., Cardona, M., Schmitt, E., Blumm, J., Estreicher, S.K., Sanati, M., Bockowski, M., Grzegory, I., Suski, T.Jezowski, A.: Heat capacity of α-GaN: Isotope effects. Phys. Rev. B 72, 075209 2005CrossRefGoogle Scholar
19Danilchenko, B.A., Paszkiewicz, T., Wolski, S., Jezowski, A.Plackowski, T.: Heat capacity and phonon mean free path of wurtzite GaN. Appl. Phys. Lett. 89, 061901 2006Google Scholar
20Chen, X.L., Lan, Y.C., Liang, J.K., Cheng, X.R., Xu, Y.P., Xu, T., Jiang, P.Z.Lu, K.Q.: Structure and heat capacity of wurtzite GaN from 113 to 1073 K. Chin. Phys. Lett. 16, 107 1999CrossRefGoogle Scholar
21Itagaki, K.Yamaguchi, K.: High temperature heat contents of III-V semiconductor systems. Thermochim. Acta 163, 1 1990CrossRefGoogle Scholar
22Leitner, J., Strejc, A., Sedmidubsky, D.Ruzicka, K.: High temperature enthalpy and heat capacity of GaN. Thermochim. Acta 401, 169 2003Google Scholar
23Unland, J., Onderka, B., Davydov, A.Schmid-Fetzer, R.: Thermodynamics and phase stability in the Ga-N system. J. Cryst. Growth 256, 33 2003Google Scholar