Journal of Materials Research

Articles

Increasing the mean grain size in copper films and features

K. Vanstreelsa1 c1, S.H. Brongersmaa2, Zs. Tokeia3, L. Carbonella3, W. De Ceunincka4, J. D’Haena4 and M. D’Olieslaegera4

a1 Hasselt University, Institute for Materials Research, 3590 Diepenbeek, Belgium; and Interuniversity Microelectronics Centre (IMEC) vzw, Division Imomec, 3590 Diepenbeek, Belgium

a2 Stichting Interuniversity Microelectronics Centre (IMEC) Nederland, High Tech Campus 48, 5605 KN Eindhoven, The Netherlands

a3 Interuniversity Microelectronics Centre (IMEC) vzw, 3001 Leuven, Belgium

a4 Hasselt University, Institute for Materials Research, 3590 Diepenbeek, Belgium; and Interuniversity Microelectronics Centre (IMEC) vzw, Division Imomec, 3590 Diepenbeek, Belgium

Abstract

A new grain-growth mode is observed in thick sputtered copper films. This new grain-growth mode, also referred to in this work as super secondary grain growth (SSGG) leads to highly concentric grain growth with grain diameters of many tens of micrometers, and drives the system toward a {100} texture. The appearance, growth dynamics, final grain size, and self-annealing time of this new grain-growth mode strongly depends on the applied bias voltage during deposition of these sputtered films, the film thickness, the post-deposition annealing temperature, and the properties of the copper diffusion barrier layers used in this work. Moreover, a clear rivalry between this new growth mode and the regularly observed secondary grain-growth mode in sputtered copper films was found. The microstructure and texture evolution in these films is explained in terms of surface/interface energy and strain-energy density minimizing driving forces, where the latter seems to be an important driving force for the observed new growth mode. By combining these sputtered copper films with electrochemically deposited (ECD) copper films of different thickness, the SSGG growth mode could also be introduced in ECD copper, but this led to a reduced final SSGG grain size for thicker ECD films. The knowledge about the thin-film level is used to also implement this new growth mode in small copper features by slightly modifying the standard deposition process. It is shown that the SSGG growth mode can be introduced in narrow structures, but optimizations are still necessary to further increase the mean grain size in features.

(Received April 19 2007)

(Accepted August 27 2007)

Key Words:

  • Crystal growth;
  • Cu;
  • Grain size

Correspondence:

c1 Address all correspondence to this author. e-mail: kris.vanstreels@uhasselt.be

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