a1 Materials and Minerals Division, National Institute for Interdisciplinary Science and Technology (NIST), Trivandrum-695 019, India
a2 Microwave Materials Division, Centre for Materials in Electronics (C-MET), Thrissur-680 771, India
a3 School of Engineering, James Cook University, Townsville, QLD 4811, Australia
a4 Materials and Minerals Division, National Institute for Interdisciplinary Science and Technology (NIST), Trivandrum-695 019, India
MgTe2O5 ceramics were prepared by solid-state route. These materials were sintered in the temperature range of 640–720 °C. The structure and microstructure of the compound was investigated using x-ray diffraction (XRD), Fourier transform infrared (FTIR), Raman spectroscopy, and scanning electron microscopy (SEM) techniques. The dielectric properties of the ceramics were studied in the frequency range 4–6 GHz. The MgTe2O5 ceramics have a dielectric constant (ϵr) of 10.5, quality factors (Qu × f) of 61000 at 5.3 GHz, and temperature coefficient of resonant frequency (τf) of −45 ppm/°C at the optimized sintering temperature of 700 °C. The microwave dielectric properties of these materials at cryogenic temperatures were also investigated.
(Received August 10 2007)
(Accepted December 12 2007)