Journal of Materials Research

Articles

Infrared luminescence properties of bismuth-doped barium silicate glasses

Jinjun Rena1, Jianrong Qiua2 c1, Danping Chena3, Chen Wanga4, Xiongwei Jianga5 and Congshan Zhua5

a1 State Key Laboratory for High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People’s Republic of China; and Graduate School of the Chinese Academy of Sciences, Beijing 100080, People’s Republic of China

a2 State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China

a3 State Key Laboratory for High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People’s Republic of China

a4 State Key Laboratory for High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People’s Republic of China; and Graduate School of the Chinese Academy of Sciences, Beijing 100080, People’s Republic of China

a5 State Key Laboratory for High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People’s Republic of China

Abstract

Infrared (IR) luminescence covering 1.1 to ∼1.6 μm wavelength region was observed from bismuth-doped barium silicate glasses, excited by a laser diode at 808 nm wavelength region, at room temperature. The peak of the IR luminescence appears at 1325 nm. A full width half-maximum (FWHM) and the lifetime of the fluorescence is more than 200 nm and 400 μs, respectively. The fluorescence intensity increases with Al2O3 content, but decreases with BaO content. We suggest that the IR luminescence should be ascribed to the low valence state of bismuth Bi2+ or Bi+, and Al3+ ions play an indirect dispersing role for the infrared luminescent centers.

(Received September 28 2006)

(Accepted March 29 2007)

Key Words:

  • Bi;
  • Luminescence;
  • Optical properties

Correspondence:

c1 Address all correspondence to this author. e-mail: renjinjunsiom@163.com

0Comments