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Effect of accelerating voltage on planar and axial channeling in ordered intermetallic compounds

Published online by Cambridge University Press:  31 January 2011

P.R. Munroe  and
I. Baker
P.R. Munroe*
Affiliation:
Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755
I. Baker
Affiliation:
Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755
*
a)Current address: School of Materials Science and Engineering, University of New South Wales, Kensington, New South Wales 2033, Australia.
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Abstract

The ternary site occupancy of two alloys, vanadium in NiAl + V and hafnium in nickel-rich, boron doped Ni3Al + Hf, was determined by ALCHEMI, or atom location by channeling enhanced microanalysis. Vanadium exhibited a preference for the aluminum sublattice in NiAl, and hafnium preferentially occupied the aluminum sites in Ni3Al. Spectra were acquired over a range of accelerating voltages from 80 kV to 200 kV. Delocalization effects were observed to increase as the accelerating voltage increased, which thus reduces the accuracy of the ALCHEMI data. For NiAl + V, both planar and axial channeling were performed, and delocalization effects were greater for axial channeling, further reducing the accuracy of the ALCHEMI data.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 8 , August 1992 , pp. 2119 - 2125
Copyright
Copyright © Materials Research Society 1992

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