Journal of Materials Research

Communications

Chemical vapor deposition of copper via disproportionation of hexafluoroacetylacetonato(1,5 -cyclooctadiene)copper(I), (hfac)Cu(1,5-COD)

A. Jaina1, K.M. Chia2, M.J. Hampden-Smitha2 c1, T.T. Kodasa3 c1, J.D. Farra4 and M.F. Paffetta4

a1 Department of Chemical Engineering, University of New Mexico, Albuquerque, New Mexico 87131

a2 Department of Chemistry and Center for Micro-Engineered Ceramics, University of New Mexico, Albuquerque, New Mexico 87131

a3 Department of Chemical Engineering, and Center for Micro-Engineered Ceramics, University of New Mexico, Albuquerque, New Mexico 87131

a4 CLS-1, Los Alamos National Laboratories, Los Alamos, New Mexico 87545

Abstract

Hot- and cold-wall chemical vapor deposition (CVD) using the volatile copper(I) compound (hfac)Cu(1,5-COD), where hfac = 1,1,1,5,5,5,-hexafluoroacetylacetonate and 1,5-COD = 1,5-cyclooctadiene, as a precursor was carried out in hot-wall and warm-wall, lamp-heated reactors using SiO2 substrates that had been patterned with Pt or W, over a temperature range 120 °C-250 °C. Deposition was observed onto Pt, W, and SiO2 over this temperature range at rates of up to 3750 Å/min to give copper films that contained no detectable impurities by Auger electron spectroscopy and gave resistivities of 1.9-5.7 μ ohm cm. The volatile by-products formed during deposition were 1,5-COD and Cu(hfac)2 and a mass balance was consistent with the quantitative disproportionation reaction: 2(hfac)Cu(1,5-COD) → Cu + Cu(hfac)2 + 2(1,5-COD). The measured activation energy for this CVD reaction was 26(2) kcal/mol. The absence of selectivity for metal surfaces in the presence of SiO2 is in contrast to CVD results for the related compounds (β-diketonate)Cu(PMe3) where β-diketonate = hfac, 1,1,1-trifluoroacetylacetonate (tfac), and acetylacetonate (acac).

(Received April 09 1991)

(Accepted September 25 1991)

Correspondence:

c1 Authors to whom correspondence should be addressed.

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