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An investigation of hardness and adhesion of sputter-deposited aluminum on silicon by utilizing a continuous indentation test

Published online by Cambridge University Press:  31 January 2011

D. Stone ,
W. R. LaFontaine ,
P. Alexopoulos ,
T. -W. Wu  and
Che-Yu Li
D. Stone
Affiliation:
Cornell University, Ithaca, New York 14853
W. R. LaFontaine
Affiliation:
Cornell University, Ithaca, New York 14853
P. Alexopoulos
Affiliation:
IBM Almaden Research Center, San Jose, California 95192
T. -W. Wu
Affiliation:
IBM Almaden Research Center, San Jose, California 95192
Che-Yu Li
Affiliation:
Cornell University, Ithaca, New York 14853
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Abstract

The hardness of aluminum films on silicon are measured as functions of depth of the indenter. The films have thicknesses of 0.25,0.5, and 1.0μm. The adhesion between one film and the substrate has been reduced through the prior deposition of a 10 nm layer of carbon. In each case the hardness is found to increase as the indenter approaches the film-substrate interface, but the rate of increase is greater for a film with good adhesion than for one with poor adhesion. It is suggested that this increase results from the constraint on deformation of the film by the substrate. A physical model is proposed whereby the yield stress of the film, σo, and an average effective shear strength τ of the indenter-film and film-substrate interfaces, may be determined from the data.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 1 , February 1988 , pp. 141 - 147
Copyright
Copyright © Materials Research Society 1988

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References

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