a1 IRSEEM/ESIGELEC, Technopôle du Madrillet, Avenue Galillée, 76800 Saint Etienne du Rouvray, France.
a2 GPM/UMR 6634 CNRS, Avenue de l'Université, 76800 Saint Etienne du Rouvray, France.
a3 THALES AIR SYSTEMS, ZI du Mont Jarret, 76520 Ymare, France.
This paper deals with the various aspects of electromagnetic field impact modeling on the SiGe heterojunction bipolar transistor (HBT) device for microwave applications. This study differs from conventional HBT device reliability research associated with other stresses. The originality of this study comes from the generation of a localized electromagnetic field using the near-field bench. A coupling phenomenon between the electromagnetic field and the micro-strip lines connecting the transistor are evaluated by electromagnetic and electrical simulations. After stress, the input and the transmission scattering parameters are affected. This is primarily due to the deviation of the input impedance and the reduction of the transconductance, respectively. The stress effects have been related to a base current degradation. This degradation is due to a hot carrier introducing generation/recombination trap centers at the Si/SiO2 interface of the emitter–base spacer oxide, which leads to an excess recombination base current.
(Received June 30 2009)
(Revised September 08 2009)
(Online publication January 07 2010)