Microscopy and Microanalysis

Table of Contents - 2004 - Volume 10, Issue 02  


Quantitative Transmission Electron Microscopy at Jülich, Germany

Quantitative Transmission Electron Microscopy Analysis of the Pressure of Helium-Filled Cracks in Implanted Silicon

K.  Tillmann  a1 c1 , N.  Hüging  a1 , H.  Trinkaus  a1 and M.  Luysberg  a1
a1 Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany

Article author query
tillmann k   [PubMed][Google Scholar] 
huging n   [PubMed][Google Scholar] 
trinkaus h   [PubMed][Google Scholar] 
luysberg m   [PubMed][Google Scholar] 

Abstract

The pressure of crack-shaped cavities formed in silicon upon implantation with helium and subsequent annealing is quantitatively determined from the measurement of diffraction contrast features visible in transmission electron micrographs taken under well-defined dynamical two-beam conditions. For this purpose, simulated images, based on the elastic displacements associated with a Griffith crack, are matched to experimental micrographs, thus yielding unambiguous quantitative data on the ratio p/[mu] of the cavity pressure to the silicon matrix shear modulus. Experimental results demonstrate cavity radii of some 10 nm and p/[mu] values up to 0.22, which may be regarded as sufficiently high for the emission of dislocation loops from the cracks.

(Received December 19 2002)
(Accepted March 18 2003)


Key Words: diffraction contrast imaging; image similations; crack-shaped cavities; transmission electron microscopy; silicon; helium implantation.

Correspondence:
c1 Corresponding author. E-mail: k.tillmann@fz-juelich.de