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Electroluminescence Enhancement via Grating on a Si-based Plasmonic Metal-Insulator-Semiconductor Tunnel Junction

Published online by Cambridge University Press:  08 January 2016

Hasan Goktas  and
Volker J. Sorger
Hasan Goktas
Affiliation:
Electrical and Computer Engineering, The George Washington University, 2121 I St. NW, Washington, DC 20052
Volker J. Sorger*
Affiliation:
Electrical and Computer Engineering, The George Washington University, 2121 I St. NW, Washington, DC 20052
*
*(Email: sorger@gwu.edu)
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Abstract

Here we fabricated and characterized a CMOS compatible metal-insulator-semiconductor (MIS) plasmonic tunnel junction for Si-based photonic circuitry. A grating structure was realized on MIS plasmonic tunnel junction via focused-ion-beam milling (FIB) to increase the intensity of the light emission that occurs during inelastic electron tunneling. Approximately 65 times higher intensity of light emission is achieved with the grating structure during the measurements.

Keywords

opticaloptoelectronicphotoemission
Type
Articles
Information
MRS Advances , Volume 1 , Issue 23: Electronics and Photonics , 2016 , pp. 1709 - 1713
Copyright
Copyright © Materials Research Society 2016 

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References

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