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Effect of Focused Ion Beam Imaging on the Crystallinity of InAs

Published online by Cambridge University Press:  18 September 2015

Wei-Chieh Chen ,
Tien-Hao Huang ,
Kuan-Chao Chen  and
Hao-Hsiung Lin
Wei-Chieh Chen
Affiliation:
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan
Tien-Hao Huang
Affiliation:
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan
Kuan-Chao Chen
Affiliation:
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
Hao-Hsiung Lin*
Affiliation:
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan
*
*Corresponding author.hhlin@ntu.edu.tw
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Abstract

We investigated the effect of focused ion beam (FIB) imaging on the crystallinity of InAs using Raman scattering. A spatial correlation model was used to fit the broad band induced by FIB imaging. The fitting gives a correlation length of ~42 Å for the noisiest image condition (with an ion fluence of 7.4×1010 cm−2), implying severe damage in the surface layer of InAs. However, further increasing the fluence by several orders of magnitude only decreases the correlation length from 42 to 35 Å. We attribute the severe damage to the high beam current density and the low scanning speed of the FIB imaging process. These process conditions, along with low InAs thermal conductivity, also leads to a high local temperature in the exposed region that largely annihilated the defects and resulted in the nearly fluence-independent behavior.

Keywords

focused ion beamion imageInAscrystallinityRamanspatial correlation
Type
Materials Applications and Techniques
Information
Microscopy and Microanalysis , Volume 21 , Issue 6 , December 2015 , pp. 1426 - 1432
Copyright
© Microscopy Society of America 2015 

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References

Adachi, S. (1999). Optical Constants of Crystalline and Amorphous Semiconductors: Numeric Dat and Graphical Information. NY: Springer Science+Business Media.CrossRefGoogle Scholar
Aspnes, D.E. & Studna, A.A. (1983). Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs and InSb from 1.5 to 6.0 eV. Phys Rev B 27, 985.Google Scholar
Balcells, L.I., Abad, L.I., Rojas, H. & Martínez, B. (2008). Material damage induced by nanofabrication processes in manganite thin films. Nanotechnol 19, 135307.Google Scholar
Bamba, Y., Miyauchi, E., Arimoto, H., Kuramoto, K., Takamori, A. & Hashimoto, H. (1983). Focused Si ion implantation in GaAs. Jpn J Appl Phys Part 2 22, L650.CrossRefGoogle Scholar
Bever, T., Jäger-Waldau, G., Eckberg, M., Heyen, E.T., Lage, H., Wieck, A.D. & Ploog, K. (1992). Lateral spreading of focused ion beam induced damage. J Appl Phys 72, 1858.CrossRefGoogle Scholar
Caries, R., Saint-Cricq, N., Renucci, J.B., Renucci, M.A. & Zwick, A. (1980). Second-order Raman scattering in InAs. Phys Rev B 22, 4804.Google Scholar
Dennis, J.R. & Hale, E.B. (1976). Radiation effects: Incorporating plasma science and plasma technology. Radia Eff 30, 219.Google Scholar
Giannuzzi, L.A. & Stevie, F.A. (2005). Introduction to Focused Ion Beams: Instrumentation, Theory, Techniques and Practice. New York, NY: Springer Science+Business Media.Google Scholar
Grossklaus, K.A. & Millunchick, J.M. (2011). Mechanisms of nanodot formation under focused ion beam irradiation in compound semiconductors. J Appl Phys 109, 014319.Google Scholar
Ikoma, T. (1990). Very High Speed Integrated Circuits: Gallium Arsenide LSI. New York, NY: Academic Press.Google Scholar
Kim, S.G., Asahi, H., Seta, M., Emura, S., Watanabe, H., Gonda, S. & Tanoue, H. (1993). Raman scattering study on the effects of Ga ion implantation and subsequent thermal annealing for AlSb grown by molecular beam epitaxy. J Appl Phys 74, 2300.Google Scholar
Kittel, C. (2005). Introduction to Solid State Physics, 8th ed. Hoboken, NJ: John Wiley & Sons.Google Scholar
Kranz, C., Friedbacher, G. & Mizaikoff, B. (2001). Integrating an ultramicroelectrode in an AFM cantilecev: Combined technology for enhanced information. Anal Chem 73, 2491.Google Scholar
Langford, R.M. & Petford-Long, A. (2001). Broad ion beam milling of focused ion beam prepared tranmission electron microscopy cross sections for high resolution electron microscopy. J Vac Sci Technol A 19, 982.Google Scholar
Laruelle, F., Hu, P. & Simes, R. (1989). Implantation enhanced interdiffusion in GaAs/GaAlAs quantum structures. J Vac Sci Technol B 7, 2034.Google Scholar
Longo, D.M., Benson, W.E., Chraska, T. & Hull, R. (2001). Deep submicron microcontact printing on planar and curved substrates utilizing focused ion beam fabricated printheads. Appl Phys Lett 78, 981.Google Scholar
Mayer, J.W., Eriksson, L. & Davies, J.A. (1970). Ion Implantation in Semiconductors. San Diego, CA: Academic Press.Google Scholar
McKay, H., Rudzinski, P., Dehne, A. & Millunchick, J.M. (2007). Focused ion beam modification of surfaces for directed self-assembly of InAs/GaAs(001) quantum dots. Nanotechnol 18, 455303.Google Scholar
Menzel, R., Gärtner, K., Wesch, W. & Hobert, H. (2000). Damage production in semiconductor materials by a focused Ga+ ion beam. J Appl Phys 88, 5658.Google Scholar
Rama Rao, C.S., Sundaram, S., Schmidt, R.L. & Comas, J. (1983). Study of ionimplantation damage in GaAs: Be and InP: Be using Raman scattering. J Appl Phys 54, 1808.Google Scholar
Swaminathan, V. & Macrander, A.T. (1991). Materials Aspects of GaAs and InP Based Structures. Englewood Cliffs, NJ: Prentice-Hall.Google Scholar
Tamura, M. (1991). Damage Formation and Annealing of Ion Implantation in Si. Amsterdam: North-Holland.Google Scholar
Tiong, K.K., Amirtharaj, P.M., Pollak, F.H. & Aspnes, D.E. (1984). Effect of As+ ion implantation on the Raman spectra of GaAs: “Spatial correlation” interpretation. Appl Phys Lett 44, 122.CrossRefGoogle Scholar
Yu, S.J., Asahi, S., Emura, S., Sumida, H., Gonda, S. & Tanoue, H. (1989). Raman scattering assessment of Si+ implantation damage in InP. J Appl Phys 66, 856.CrossRefGoogle Scholar
Ziegler, J.F., Biersak, J.P. & Ziegler, M.D. (2008). Software: Stopping and Range of Ions in Matter (SRIM). SRIM version: SRIM-2008. 04. http://www.srim.org/Google Scholar