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Comprehensive Comparison of Various Techniques for the Analysis of Elemental Distributions in Thin Films: Additional Techniques

Published online by Cambridge University Press:  14 September 2015

Daniel Abou-Ras*
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
Raquel Caballero
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
Cornelia Streeck
Affiliation:
Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin, Germany
Burkhard Beckhoff
Affiliation:
Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin, Germany
Jung-Hwan In
Affiliation:
School of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea
Sungho Jeong
Affiliation:
School of Mechatronics, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 500-712, Republic of Korea
*
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Abstract

In a recent publication by Abou-Ras et al., various techniques for the analysis of elemental distribution in thin films were compared, using the example of a 2-µm thick Cu(In,Ga)Se2 thin film applied as an absorber material in a solar cell. The authors of this work found that similar relative Ga distributions perpendicular to the substrate across the Cu(In,Ga)Se2 thin film were determined by 18 different techniques, applied on samples from the same identical deposition run. Their spatial and depth resolutions, their measuring speeds, their availabilities, as well as their detection limits were discussed. The present work adds two further techniques to this comparison: laser-induced breakdown spectroscopy and grazing-incidence X-ray fluorescence analysis.

Type
Equipment and Techniques Development
Copyright
© Microscopy Society of America 2015 

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Footnotes

Current address: Universidad Autónoma de Madrid, Departamento de Física Aplicada, C/ Francisco Tomás y Valiente 7, 28049 Madrid, Spain

References

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