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Synthesis, lattice structure, and band gap of ZnSnN2

Published online by Cambridge University Press:  17 June 2013

Paul C. Quayle ,
Keliang He ,
Jie Shan  and
Kathleen Kash
Paul C. Quayle
Affiliation:
Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio, 44106-7079
Keliang He
Affiliation:
Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio, 44106-7079
Jie Shan
Affiliation:
Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio, 44106-7079
Kathleen Kash*
Affiliation:
Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio, 44106-7079
*
Address all correspondence to Kathleen Kash atkathleen.kash@case.edu
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Abstract

We report the synthesis of a direct gap semiconductor, ZnSnN2, by a plasma-assisted vapor–liquid–solid technique. Powder X-ray diffraction measurements of polycrystalline material yielded lattice parameters in good agreement with predicted values. Photoluminescence efficiency at room temperature was observed to be independent of excitation intensity between 103 and 108 W/cm2. The band gap was measured by photoluminescence excitation spectroscopy to be 1.7 ± 0.1 eV. The range of direct band gaps for the Zn(Si,Ge,Sn)N2 alloys is now predicted to extend from 4.5 to 1.7 eV, opening up this little-studied family of materials to a host of important applications.

Type
Research Letters
Information
MRS Communications , Volume 3 , Issue 3 , September 2013 , pp. 135 - 138
Copyright
Copyright © Materials Research Society 2013 

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