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Focused Ion Beam Milling of Crystalline Diamonds

Published online by Cambridge University Press:  02 March 2011

Rustin Golnabi ,
Won I. Lee ,
Deok-Yang Kim  and
Glen R. Kowach
Rustin Golnabi
Affiliation:
Bergen County Academies, 200 Hackensack Avenue, Hackensack, NJ 07601, U.S.A.
Won I. Lee
Affiliation:
Bergen County Academies, 200 Hackensack Avenue, Hackensack, NJ 07601, U.S.A.
Deok-Yang Kim
Affiliation:
Bergen County Academies, 200 Hackensack Avenue, Hackensack, NJ 07601, U.S.A.
Glen R. Kowach
Affiliation:
Department of Chemistry, The City College of New York, 160 Convent Avenue, New York, NY 10031, U.S.A.
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Abstract

Recently, a wide range of new applications of diamond materials such as spintronics, field emission, and bio-sensing have been proposed. These applications often require the precise patterning of diamonds, which is not trivial because diamonds are the hardest materials known in nature. Among various patterning techniques, the focused ion beam milling method has been proven to provide flexibility as well as high resolution in the pattern design. In this study, a focused beam of 30 kV Ga+ ions was utilized to create sub-micrometer size patterns out of crystalline diamonds. The sputtering rate, re-deposition, and surface roughening of diamond structure have been closely monitored with various milling parameters during the milling process. Our study revealed a low milling yield of 0.02 μm3/nC, high Ga content re-deposition, and the formation of sub-micron scale terracing on the sidewall of patterned diamonds.

Keywords

diamondion beam analysissputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1282: Symposium A – Diamond Electronics and Bioelectronics—Fundamentals to Applications IV , 2011 , mrsf10-1282-a05-32
Copyright
Copyright © Materials Research Society 2011

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References

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