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Block Copolymer Templating for Formation of Quantum Dots and Lattice Mismatched Semiconductor Structures

Published online by Cambridge University Press:  01 February 2011

Smita Jha ,
Chi-Chun Liu ,
Joo Hyung Park ,
Monika K. Wiedmann ,
T S Kuan ,
Susan E. Babcock ,
Luke J. Mawst ,
Paul Nealey  and
Thomas F. Kuech
Smita Jha
Affiliation:
jha@wisc.edu, University of Wisconsin-Madison, Department of Chemistry, Madison, Wisconsin, United States
Chi-Chun Liu
Affiliation:
cliu22@wisc.edu, University of Wisconsin-Madison, Department of Chemical and Biological Engineering, Madison, Wisconsin, United States
Joo Hyung Park
Affiliation:
joopark@wisc.edu, University of Wisconsin-Madison, Department of Electrical and Computer Engineering, Madison, Wisconsin, United States
Monika K. Wiedmann
Affiliation:
mwiedmann@wisc.edu, University of Wisconsin-Madison, Department of Chemical and Biological Engineering, Madison, Wisconsin, United States
T S Kuan
Affiliation:
kuan@albany.edu, University at Albany, Department of Physics, Albany, New York, United States
Susan E. Babcock
Affiliation:
babcock@engr.wisc.edu, University of Wisconsin-Madison, Department of Materials Science and Engineering, Madison, Wisconsin, United States
Luke J. Mawst
Affiliation:
mawst@engr.wisc.edu, University of Wisconsin-Madison, Department of Electrical and Computer Engineering, Madison, Wisconsin, United States
Paul Nealey
Affiliation:
nealey@engr.wisc.edu
Thomas F. Kuech
Affiliation:
kuech@engr.wisc.edu, University of Wisconsin, Chemical Engineering, Madison, Wisconsin, United States
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Abstract

Templated growth for the fabrication of semiconductor nanostructures such as quantum dots and lattice-mismatched structures has been employed in this study. Self assembly of block copolymers (BCP) has been exploited to create a regular array of nanoscale patterns on a substrate to generate the growth template. These patterned templates were used for the selective area growth of pseudomorphic quantum dots, allowing for precise control over the dot size and spatial distribution. Strain relaxation in lattice-mismatched structures grown past the pseudomorphic limit was also studied. Analysis of the grown structures suggests that this approach using block copolymer templating followed by selective growth can be used for defect reduction in lattice-mismatched materials.

Keywords

epitaxydefectsIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1258: Symposia P/Q/R – Low-Dimensional Functional Nanostructures-Fabrication, Characterization and Applications , 2010 , 1258-Q13-05
Copyright
Copyright © Materials Research Society 2010

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